Taiwan Semiconductor Manufacturing Comp. Ltd.

Hao Wen Hsu

Chia-Der Chang

Min-Hsiung Chiang

Pin-Cheng Hsu

Shu-Wei Chung

Chih Hsiung Lin

Some embodiments of the present disclosure provide a semiconductor device including a substrate and a gate structure on the substrate. A first well region of a first conductivity type is in the substrate, close to a first sidewall of the gate structure. A second well region of a second conductivity type is also in the substrate close to the second sidewall of the gate structure. A conductive region is disposed in the second well region. The conductive region can be an epitaxy region. A chemical composition inside the second well region between the conductive region and the gate structure is essentially homogeneous as a chemical composition throughout the second well region.

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Hsinchu, Taiwan

Hao Wen Hsu