Huazhong University of Science and Technology

Wuhan Joule Yacht Science & Technology Co., Ltd.

Hao Tong

Xiangshui Miao

Binhao Wang

Lun Wang

Wang Cai

Yuanbing Wang

Qi Lin

Yingrui Cai

Yushan Shen

Yang Zhou

Yi Wang

Qing Hua Hu

Xiaomin Cheng

Qiang He

Yuhui He

Lingjun Zhou

Weiguo Wang

Ruizhe Zhao

Jiangxi Chen

Shaojie Long

Yitao Lu

Yuxin Xie

Qingshan Tan

Lifan Ma

Da He

Mengqian Cui

Kaizhan Wang

Provided is a dynamic memory structure and an operating method thereof. The dynamic memory structure includes a write gating device, a read gating device, and a capacitor. A first terminal of the write gating device, a first terminal of the read gating device, and a first terminal of the capacitor are connected together; a second terminal of the write gating device is a data writing end; a second terminal of the read gating device is a data reading end; and a second terminal of the capacitor is a gating end and connected to a word line. The write gating device and the read gating device are both unidirectionally conducted, and conduction modes of the write gating device and the read gating device are both threshold-on. A conduction threshold voltage of the write gating device is less than a conduction threshold voltage of the read gating device.

Method for operating a dynamic memory structure having a write gating device, a read gating device, and a capacitor

An electrically-controllable color filter array based on a phase-change material, and an artificial vision system. The filter array includes a plurality of color filter units; each of the color filter units includes a metal layer, a bottom transparent conductive layer, a chalcogenide phase-change material layer, and a top transparent conductive layer; the red, green and blue filter function of each of the color filter units is adjusted according to the thickness of the bottom transparent conductive layer and the top transparent conductive layer; in the color filter units arranged in the array; the state transition of the chalcogenide phase-change material layer in each of the color filter units is realized by adjusting an electric pulse applied to the bit line and the word line where the electric pulse is present.

Electrically-controllable color filter array based on phase-change material, and artificial vision system

Provided is a design method for a threshold switch device, a threshold switch device, and a dynamic memory, relating to the technical field of memories. The design method includes: testing a hold voltage, a low-resistance-state (LRS) resistance, and a threshold voltage of a threshold switch function layer; determining a target hold voltage of a threshold switch device according to the threshold voltage; determining a resistance sum of a top electrode and a bottom electrode of the threshold switch device according to the hold voltage and the LRS resistance of the threshold switch function layer and the target hold voltage of the threshold switch device; and selecting materials and thin film parameters of the top electrode and the bottom electrode according to the resistance sum of the top electrode and the bottom electrode of the threshold switch device, to design the threshold switch device meeting the target hold voltage.

Method for threshold switch device, threshold switch device, and dynamic memory

A selector with a superlattice-like structure and a preparation method thereof are provided, which belong to the technical field of micro-nano electronics. The selector includes a substrate, and a first metal electrode layer, a superlattice-like layer, and a second metal electrode layer sequentially stacked on the substrate. The superlattice-like layer includes n+1 first sublayers and n second sublayers alternately stacked periodically. A material of the first sublayer is amorphous carbon, and a material of the second sublayer is a chalcogenide with gating property.

Selector with superlattice-like structure and preparation method thereof

The disclosure belongs to the field of microelectronics, and specifically, relates to a method of inducing crystallization of a chalcogenide phase-change material and application thereof. To be specific, a dielectric material is brought into contact with an interface of the chalcogenide phase-change material. The dielectric material is in an octahedral configuration, and the dielectric material provides a crystal nucleus growth center for the crystallization of the chalcogenide phase-change material at the interface between the two, so as to induce the phase-change material to accelerate the crystallization. The method is further applied in a phase-change memory cell. Among all the dielectric material layers in contact with the chalcogenide phase-change material layer, the dielectric material structure of at least one side of the dielectric material layer is an octahedral configuration.

Method of inducing crystallization of chalcogenide phase-change material and application thereof

The invention discloses a three-dimensional 1S1C memory based on a ring capacitor and a preparation method. The memory includes: a horizontal peripheral electrode layer including a first dielectric layer and a first metal electrode layer alternately stacked and grown on a substrate and provided with trenches penetrating in a vertical direction and holes penetrating in the vertical direction, a vertical functional layer, and a capacitive dielectric layer. An annular groove is disposed outside each hole. The annular groove surrounds the holes and vertically cuts off the peripheral electrode layer. The annular groove is evenly filled with a capacitive dielectric layer. A top of the second metal electrode layer is extended to a surface of a topmost first dielectric layer to form a bit line electrode and is connected to a bit line. A region where the second metal electrode layer faces the first metal electrode layer forms a memory cell.

Three-dimensional 1S1C memory based on ring capacitor and preparation method

Disclosed are an OTS-based dynamic storage structure and an operation method thereof. The OTS-based dynamic storage structure includes a plurality of storage units distributed in an array, and each storage unit includes an OTS gating transistor and a storage capacitor. The OTS gating transistor has two states, namely, high resistance state and low resistance state. When the voltage across the OTS gating transistor exceeds the threshold voltage V, the OTS gating transistor is switched from the high resistance state to the low resistance state. When the voltage across the OTS gating transistor in the low resistance state is lower than the holding voltage V, the OTS gating transistor is switched from the low resistance state to the high resistance state.

OTS-based dynamic storage structure and operation method thereof

The disclosure belongs to the field of micro-nano electronic materials, and in particular to a Se-based selector material, a selector unit, and a preparation method thereof. The Se-based selector material is a compound including Ge, Se, and B elements. The chemical formula of the Se-based selector material is (GeSe)BM, in which the M element is at least one of In, Ga, Al, and Zn, and 0.1≤x≤0.9, 0.02≤y≤0.15, and 0≤z≤0.2. The problems of safety and stability of the existing material selection for the selector are solved by the selector material, the selector unit, and the preparation method thereof provided by the disclosure. In addition, the threshold voltage of the selector device prepared based on the Se-based selector material is adjustable, and the comprehensive performance is good.

Se-based selector material, selector unit and method for preparing the same

A method for operating a dynamic memory is provided, and the method includes the following steps. A refresh operation is performed on the dynamic memory according to predetermined interval time T, an operation command is received in real time at the same time, a read operation is performed on a selected memory cell according to position information of the selected memory cell in the operation command when the operation command is received, and state data read in the read operation is temporarily stored in a read buffer. The interval time T is less than time t required for a voltage value of a capacitor in the memory cell to drop to a critical capacitor voltage value for the read operation to correctly read the state data of the memory cell during a write operation. According to operation command type information in the operation command, corresponding operations are performed on the selected memory cell.

Method for operating dynamic memory

The disclosure discloses a three-dimensional (3D) convolution operation device and method based on a 3D phase change memory, which includes a 3D phase change memory, an input control module, a setting module, and an output control module. By using the 3D phase change memory to perform 3D convolution operation, the phase change units on the same bit line constitute a convolution kernel. Based on the multilayer stack structure, the upper and lower electrodes of the 3D phase change memory serve as the information input terminal, and they are convolved after passing through the respective phase change unit arrays, and the result of the convolution operation is superposed on the middle electrode in the form of current, thereby obtaining the sum of the convolution calculation results of the input information of the upper and lower electrodes, such that the 3D convolution operation is completed in one step.

Three-dimensional convolution operation device and method based on three-dimensional phase change memory

The disclosure belongs to the technical field of microelectronic devices and memories, and discloses a three-dimensional stacked phase change memory and a preparation method thereof. The preparation method includes: preparing a multilayer structure in which horizontal electrode layers and insulating layers are alternately stacked, then performing etching to form trenches and separated three-dimensional strip electrodes, next filling the trenches with an insulating medium, and then forming small holes at the boundary region between the three-dimensional strip electrodes and the insulating medium, thereafter sequentially depositing a phase change material on the walls of the small holes, and filling the small holes with an electrode material to prepare vertical electrodes, so as to obtain a three-dimensional stacked phase change memory stacked in multiple layers. By improving the overall process of the preparation method, the disclosure realizes the establishment of a three-dimensional phase change memory array by using a vertical electrode structure.

Three-dimensional stacked phase change memory and preparation method thereof

A selector device including a first metal electrode layer, a second metal electrode layer and a switching layer disposed between the first metal electrode layer and the second metal electrode layer. The switching layer is a stacked assembly of ABA, BAB, AB or BA, where A is an ion supply layer, and B is a conversion layer. The ion supply layer includes a chalcogenide metal material having a metal atomic content of more than 0% and not more than 50% with respect to the chalcogenide metal material. The conversion layer includes a chalcogenide material.

Selector device and method of making the same

A pretreatment method of a selector device is provided, which includes: (1) performing a first voltage scan of a selector through selecting a voltage scan range and setting a first limit current Ito obtain a resistance state Rof a sub-threshold region thereof; (2) setting an nlimit current Iand performing an nvoltage scan of the selector according to a resistance state Rof a sub-threshold region of the selector after an n&#x2212;1voltage scan to obtain a resistance state Rof a sub-threshold region thereof, where, I&#x3c;I, and an initial value of n is 2; and (3) stopping a voltage scan of the selector device under a read voltage is applied when a resistance value of a high resistance state of the selector device after the nvoltage scan is greater than a resistance value of a high resistance state of the selector device after the first voltage scan; otherwise, n=n+1, and returning to Step (2).

Pretreatment method of selector device

Disclosed in the present invention are a chalcogenide phase change material based all-optical switch and a manufacturing method therefor, relating to the field of optical communications. The all-optical switch comprises: stacked in sequence, a cover layer film, a chalcogenide phase change material film, an isolation layer film, a silicon photonic crystal, and a substrate. The silicon photonic crystal comprises a nano-porous structure such that the silicon photonic crystal has a Fano resonance effect. When the all-optical switch is used, the state of the chalcogenide phase change material film is controlled by means of laser, and the resonance state of the silicon photonic crystal is modulated to implement modulation of signal light transmissivity; the modulation range is within a communication band from 1500 nm to 1600 nm, thereby implementing an optical switch. The all-optical switch of the present invention has the characteristics of high contrast ratio, high rate and low loss.

Chalcogenide phase change material based all-optical switch and manufacturing method therefor

An operating method for improving the performance of a selector device is provided, including: determining and applying a direct current (DC) or alternating current (AC) operating voltage and a limit current of the selector device, so that the selector device circulates until a off-state resistance is reduced; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is reduced to a minimum value; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is increased; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is increased to a maximum value; and adjusting the operating voltage and the limit current, and performing DC or AC operation pulsed operation on a selector.

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Hubei, China

Hao Tong