Hon Hai Precision Industry Co., Ltd.

Tsinghua University

Hao-Su Zhang

Shou-Shan Fan

Qun-Qing Li

Jun Zhu

Guo-Fan Jin

Zhen-Dong Zhu

A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a protective layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. the protective layer is located on the semiconductor layer. The cermet layer is located on the protective layer. A first electrode covers entire surface of the first semiconductor layer away from the active layer. A second electrode is electrically connected to the second semiconductor layer.

Light emitting diode

A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer stacked together. The active layer is on a surface of the first semiconductor layer. The second semiconductor layer is on a surface of the active layer away from the first semiconductor layer. The cermet layer is on a surface of the second semiconductor layer away from the first semiconductor layer.

Semiconductor structure

A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. The substrate is removed to form an exposed surface. A first electrode is applied to cover the entire exposed surface of the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer.

Method for making light emitting diode

A light emitting diode includes a source layer, a metallic plasma generating layer, a first optical symmetric layer, a first electrode, and a second electrode. The source layer includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in series. The first semiconductor layer includes a first surface and a second surface opposite to the first surface. The first electrode covers and contacts the first surface. The second electrode is electrically connected with the second semiconductor layer. The metallic plasma generating layer is disposed on a surface of the source layer away from the first semiconductor layer. The first optical symmetric layer is disposed on a surface of the metallic plasma generating layer away from the first semiconductor layer. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3.

A light emitting diode includes a substrate, a buffer layer, a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. The cermet layer is on the second semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer.

A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. The cermet layer is on the second semiconductor layer. A first electrode covers entire surface of the first semiconductor layer away from the active layer. A second electrode is electrically connected to the second semiconductor layer.

A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. A first electrode is applied to electrically connected to the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer.

A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked in that sequence. A first effective refractive index nof the second optical symmetric layer, a second effective refractive index nof an integrated structure satisfy |n&#x2212;n|&#x2266;0.5, wherein the integrated structure includes the substrate, the first semiconductor layer, the active layer, the second semiconductor layer, and the first optical symmetric layer.

A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in series. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. A first electrode is applied on an exposed surface of the first semiconductor layer. A second electrode is applied to electrically connect with the second semiconductor layer.

A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, a metallic plasma generating layer, and a first optical symmetric layer stacked in series. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3.

A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked in that sequence. A first electrode is electrically connected to the first semiconductor layer, and a second electrode is electrically connected to the second semiconductor layer. A first effective refractive index nof the second optical symmetric layer and a second effective refractive index nof an integrated structure satisfy |n&#x2212;n|&#x2266;0.5, wherein the integrated structure includes the substrate, the first semiconductor layer, the active layer, the second semiconductor layer, and the first optical symmetric layer.

A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer is formed on the second semiconductor layer. A metallic layer is applied on the first optical symmetric layer. A second optical symmetric layer is formed on the metallic layer. The substrate is removed. A first electrode is configured to cover entire exposed surface of the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer.

A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer is formed on the second semiconductor layer. A metallic layer is applied on the first optical symmetric layer. A second optical symmetric layer is formed on the metallic layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer.

A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked on the substrate in that sequence. A first electrode is electrically connected to the first semiconductor layer, and a second electrode is electrically connected to the second semiconductor layer. A first effective refractive index nof the second optical symmetric layer, a second effective refractive index nof an integrated structure satisfy |n&#x2212;n|&#x2266;0.5, wherein the integrated structure includes the substrate, the first semiconductor layer, the active layer, the second semiconductor layer, and the first optical symmetric layer.

A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer, and a second optical symmetric layer stacked with other in the listed sequence. The light emitting diode further includes a first electrode electrically connected with the first semiconductor layer and a second electrode electrically connected with the second semiconductor layer. A refractive index of the third optical symmetric layer or the fourth optical symmetric layer is in a range from about 1.2 to about 1.5. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. A refractive difference between the second optical symmetric layer and the substrate is less than or equal to 0.1.

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Beijing, China

Hao-Su Zhang