Silicon Integrated Systems Corporation

Winbond Electronics Corporation

Hao-Luen Tien

Ming-Huan Lu

Shi-Tron Lin

Shyh-Chyi Wong

Yi-Chang Hsieh

Chun-An Tu

Shang-Yi Chen

A method for analyzing power noise and method for reducing the same are disclosed, wherein the present invention is utilized in an IC design process. First, a DC analysis is performed with a related IC design by utilizing computer aided design (CAD) software and circuit simulation software for obtaining a power network model of the IC design. Then, the power network model is defined as being composed of a plurality of unit blocks. After analysis, the quantity and type, etc., of components connected electrically to each of the unit blocks are recognized and are regarded as component reference data of each of the unit blocks. Afterwards, according to the component reference data of each of the unit blocks, the voltage drop (IR drop) occurring in operation for each of the unit blocks is evaluated and obtained by utilizing an equivalent circuit constructed by components that are connected electrically to each of the unit blocks. Therefore, the voltage consumption and distribution in each region of the power network model are obtained, so that at least one appropriate capacitor can be placed on proper locations of the power network model, to compensate the voltage drop caused by the IC design components while in operation, and to decrease the power noise in the IC design.

Method for analyzing power noise and method for reducing the same

A process via mismatch detecting device is disclosed. Because the vias in the detecting circuit of process via mismatch detecting device are mismatched while the vias between the metal layers of the chips are mismatched, by appropriately placing vias in detecting circuit of process via mismatch detecting device properly, metal lines of different metal layers in the detecting circuit can become short-circuited by mismatched vias, so as to output a voltage signal that is higher after vias mismatch and is regarded as the result of detecting via mismatch. Therefore, the direction and quantity of via mismatch between the metal layers in the chip are detected and monitored effectively, so as to optimize the process. Thus, the yield of process is increased and the cost is decreased.

Process via mismatch detecting device

A transient oscillating circuit is provided to generate a series of current pulses for triggering turn-on of an ESD protection device. As VDD-to-VSS voltage increases rapidly in the initial ESD event, the series of current pulses injects minority carriers into the pwell of an NMOS transistor via an adjacent n+/pwell diode. These minority carriers flow toward the drain-substrate junction of the NMOS transistor such that the NMOS transistor is triggered at a trigger voltage lower than that provided by the prior arts. The present invention improves the ESD performance of an ESD protection device, such as a MOSFET or bipolar transistor, which is provided for protecting the power bus or IC pins during an ESD event.

Early trigger of ESD protection device by an oscillation circuit

Growing community of inventors

Taipei, Taiwan

Hao-Luen Tien