Sarnoff Corporation

Hao Lee

John Charles Connolly

Dmitri Z Garbuzov

Ramon Ubaldo Martinelli

Viktor Borisovich Khalfin

Nancy Ann Morris

Victor Borisovich Khalfin

A semiconductor laser device with separated, highly-strained quantum wells employs highly-strained ternary and quasi-ternary compounds as material for each quantum well. A first device structure includes a quantum well composition range extended from strained ternary compounds employed in conventional quantum well laser devices. A second device structure, employing a similar structure to that of the first device, employs new quasi-ternary compounds with compositions outside of the miscibility gap of corresponding quaternary compounds for quantum wells in GaSb&mdash; or InAs-based laser devices which extend performance of mid-infrared laser devices operating in the 2.2-4.0 &mgr;m range. The semiconductor diode laser may be formed so as to operate having a multi-mode or single-mode radiation.

Laser diode having separated, highly-strained quantum wells

A thermophotovoltaic cell and diode photodetector having improved open circuit voltage and high internal efficiency includes a semiconductor body having regions of n-type conductivity and p-type conductivity adjacent each other to form a p-n junction therebetween. The p-type region is of a material having a band gap which will absorb black-body radiation and the n-type region is of a material having a wider band gap than that of the p-type region. This forms a heterojunction between the two regions. The region of n-type region has a doping level which is an order of magnitude less than the doping level in the p-type region. This structure forms a cell having a space charge region in the n-type region.

Heterojunction thermophotovoltaic cell

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Lawrenceville, NJ, United States of America

Hao Lee