Taiwan Semiconductor Manufacturing Comp. Ltd.

Hao Kuang

Bao-Ru Young

Tung-Heng Hsieh

Sheng-Hsiung Wang

Pang-Chi Wu

Wang-Jung Hsueh

A device includes a semiconductor substrate, an active region over the semiconductor substrate extending lengthwise in a first direction, a gate structure over the active region extending lengthwise in a second direction perpendicular to the first direction, a source feature and a drain feature on the active region and interposed by the gate structure, a source contact on the source feature, a drain contact on the drain feature, and a via rail over the substrate spaced from the active region. The via rail includes a main portion extending lengthwise in the first direction having a sidewall surface facing opposite the end surface of the drain contact, and a jog via extending from the main portion along the second direction and having a sidewall surface facing the second direction, each of the main portion and the jog via contacting the source contact.

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Hsinchu, Taiwan

Hao Kuang