Taiwan Semiconductor Manufacturing Comp. Ltd.

Hao-Juin Liu

Chen-Shien Chen

Chita Chuang

Yao-Chun Chuang

Chen-Cheng Kuo

Ming Hung Tseng

Tsung-Hsien Chiang

Ming-Hong Cha

Ching-Wen Hsiao

Chih-Hua Chen

Hua-Wei Tseng

Hsu-Hsien Chen

Shang-Yun Tu

Ming-Da Cheng

Han-Ping Pu

Tsung-Shu Lin

Chang-Chia Huang

Yu-Chen Hsu

Yu-Jen Tseng

The embodiments described provide elongated bonded structures near edges of packaged structures free of solder wetting on sides of copper posts substantially facing the center of the packaged structures. Solder wetting occurs on other sides of copper posts of these bonded structures. The elongated bonded structures are arranged in different arrangements and reduce the chance of shorting between neighboring bonded structures. In addition, the elongated bonded structures improve the reliability performance.

Bonded structures for package and substrate

A method includes forming a plurality of vias in a dielectric layer and over a package substrate and forming a plurality of top pads over the dielectric layer, each of the plurality of top pads being connected to a respective via of the plurality of vias, wherein the plurality of top pads includes a first group, a second group, a third group and a fourth group, wherein the first group is separated from the fourth group by a first pad line, wherein the first group is separated from the second group by a second pad line, the first pad line comprising a plurality of first elongated pads, the second pad line comprising a plurality of second elongated pads, the second pad line being orthogonal to the first pad line.

Substrate pad structure

A device includes a plurality of first pads in a package substrate, wherein at least one first pad is of a first elongated shape, a plurality of vias in a dielectric layer and over the plurality of first pads, and a plurality of second pads over the package substrate, wherein at least one second pad is of a second elongated shape, and wherein the plurality of second pads is over a top surface of the dielectric layer and placed in a first region, a second region, a third region and a fourth region, and wherein second pads in two contiguous regions are oriented in two different directions.

A method for manufacturing a semiconductor package structure is provided. A semiconductor substrate comprising a conductive pad is provided, wherein the conductive pad is coupled with a circuitry of the semiconductor substrate. A patterned passivation layer exposing a portion of the conductive pad is formed. An uneven surface of the conductive pad is formed. A photoresist is formed on the semiconductor substrate. The photoresist is exposed under a light beam, wherein the light beam is scattered by the uneven surface. The photoresist is developed to form an opening in the photoresist so as to expose the conductive pad and form a plurality of cavities in the remaining photoresist. A conductive material is formed in the opening and the plurality of cavities.

Method for manufacturing semiconductor package structure

The mechanisms of forming a copper post structures described enable formation of copper post structures on a flat conductive surface. In addition, the copper post structures are supported by a molding layer with a Young's modulus (or a harder material) higher than polyimide. The copper post structures formed greatly reduce the risk of cracking of passivation layer and delamination of at the dielectric interface surrounding the copper post structures.

Mechanisms for forming fine-pitch copper bump structures

A structure comprises a plurality of top pads protruding over a top surface of a package substrate, wherein a top pad comprises a first half-circle portion, a second half-circle portion and a first rectangular portion between the first half-circle portion and the second half-circle portion, a plurality of bottom pads embedded in the package substrate, wherein a bottom pad comprises a third half-circle portion, a fourth half-circle portion and a second rectangular portion between the third half-circle portion and the fourth half-circle portion and a plurality of vias coupled between the top pads and their respective bottom pads.

A structure comprises a first passivation layer formed over a substrate, a second passivation layer formed over the first passivation layer, wherein the second passivation layer includes a first opening with a first dimension, a bond pad embedded in the first passivation layer and the second passivation layer, a protection layer formed on the second passivation layer comprising a second opening with a second dimension, wherein the second dimension is greater than the first dimension and a connector formed on the bond pad.

Interconnection structure

A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 &#x3bc;m. In another embodiment, an underbump metallization is formed through the opening, and the underbump metallization has a third diameter that is greater than the first diameter by a second distance of about 5 &#x3bc;m. In yet another embodiment, a sum of the first distance and the second distance is greater than about 15 &#x3bc;m.

Scheme for connector site spacing and resulting structures

A semiconductor package structure includes a first semiconductor substrate including a conductive pad; and a conductive pillar on the conductive pad and disposed between the first semiconductor substrate and a second semiconductor substrate. The conductive pad is coupled with a circuitry of the first semiconductor substrate. The conductive pillar extends along a longitudinal axis and toward the second semiconductor substrate. The conductive pillar includes a sidewall with a rough surface notching toward the longitudinal axis.

Semiconductor package structure and manufacturing method thereof

An embodiment is a structure. The structure comprises a substrate, a chip, and a reinforcement component. The substrate has a first surface, and the first surface comprises depressions. The chip is over and attached to the first surface of the substrate. The reinforcement component is over a first area of the first surface of the substrate. The first area is not under the chip. The reinforcement component has a portion disposed in at least some of the depressions in the first area.

Semiconductor device package and method

A structure comprises a plurality of connectors formed on a top surface of a first semiconductor die, a second semiconductor die formed on the first semiconductor die and coupled to the first semiconductor die through the plurality of connectors and a first dummy conductive plane formed between an edge of the first semiconductor die and the plurality of connectors, wherein an edge of the first dummy conductive plane and a first distance to neutral point (DNP) direction form a first angle, and wherein the first angle is less than or equal to 45 degrees.

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Kaohsiung, Taiwan

Hao-Juin Liu