Zhejiang Jinko Solar Co., Ltd

Jinko Solar Co., Ltd.

Jinko Green Energy (Shanghai) Management Co., Ltd.

Shanghai Jinko Green Energy Enterprise Management Co., Ltd.

Jinko Solar (Haining) Co., Ltd.

Shangrao Jinko Solar Technology Development Co., Ltd

Hao Jin

Xinyu Zhang

Jie Yang

Menglei Xu

Wenqi Li

Peiting Zheng

Ding Yu

WenQi Li

Xueting Yuan

Zhiqiu Guo

Zhao Wang

Wusong Tao

Luchuang Wang

Xiaowen Zhang

Shijie Zhao

Jialei Chai

Bairu Li

Tao Xu

Jingguo Yang

Xiaolong Bai

Ziyang Ou

Xiu Feng

Weize Shang

Peiyuan Wang

Lizhu He

Jide Huang

Jun Yang

Chen Chen

Shiliang Huang

Yingli Guan

Mengchao Shen

Jiajia Zhu

Niannian Qin

Yunfei Xie

Chengjun Gu

Lujia Xu

Guangdong He

Fangdan Jiang

Dongdong Sun

Zixin Fan

Yan Gao

A solar cell includes a substrate having a front surface and a back surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface of the substrate and in a direction away from the substrate; where the first passivation layer includes a dielectric material; the second passivation layer includes a first SiNmaterial, and a value of v/u is 1.3≤v/u≤1.7; and the third passivation layer includes a SiOmaterial, and a value of s/r is 1.9≤s/r≤3.2; and a tunneling oxide layer and a doped conductive layer sequentially formed on the back surface of the substrate and in a direction away from the back surface; the doped conductive layer and the substrate are doped to have a same conductivity type.

Solar cell, method for preparing same and solar cell module

A solar cell, a method for producing a solar cell and a solar cell module are provided. The solar cell includes: a substrate having a front surface and a rear surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride SiNmaterial, and a ratio of n/m is 0.5˜1; the third passivation layer includes a silicon oxynitride SiONmaterial, and a ratio of j/i is 0.1˜0.6; and a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have a doping element of a same conductivity type.

Solar cell and solar cell module

Embodiments of the present disclosure provide a solar cell and a solar cell module. The solar cell includes a first region and a second region, and further includes a substrate having a first surface and a second surface; a tunneling layer covering the second surface; a first emitter formed on part of the tunneling layer in the first region; and a second emitter formed on part of the tunneling layer in the second region and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter. The solar cell further includes a first electrode configured to electrically connect with the first emitter by penetrating through the second emitter; and a second electrode formed in the second region and configured to electrically connect with the second emitter.

A solar cell and a photovoltaic module including the same are provided. The solar cell includes a substrate having a first surface and a second surface opposite to each other; a first passivation stack disposed on the first surface and including a first oxygen-rich dielectric layer, a first silicon-rich dielectric layer, a second oxygen-rich dielectric layer, and a second silicon-rich dielectric layer that are sequentially disposed in a direction away from the first surface, wherein an atomic fraction of oxygen in the first oxygen-rich dielectric layer is less than an atomic fraction of oxygen in the second oxygen-rich dielectric layer; a tunneling oxide layer disposed on the second surface; a doped conductive layer disposed on a surface of the tunneling oxide layer; and a second passivation layer disposed on a surface of the doped conductive layer.

Solar cell and photovoltaic module

The present disclosure provides a functional part, a photovoltaic module and a manufacturing method of photovoltaic modules. The functional part is configured to form a photovoltaic module with a cell string that includes a plurality of cells. Adjacent cells of the cell string share an overlapped region. The functional part has a first surface facing the cell string and a second surface opposite to the first surface. The functional part includes at least one groove extending from the first surface towards the second surface. A location of each groove corresponds to a location of at least one overlapped region.

Solar cell and production method thereof, photovoltaic module

A solar cell and a photovoltaic module is disclosed. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

A method for manufacturing a solar cell, a method for manufacturing a monocrystalline silicon wafer and a photovoltaic module. The method for manufacturing a monocrystalline silicon wafer includes: providing a monocrystalline silicon rod; squaring the monocrystalline silicon rod to form a quasi-square silicon rod with quasi-square cross-section having an arc, a length of the arc being not less than 15 mm; slicing the quasi-square silicon rod to form at least one quasi-square silicon wafer having the arc. The method for manufacturing at least one solar cell includes: using the method described above to obtain a quasi-square silicon wafer having an arc; forming a first solar cell by processing the quasi-square silicon wafer; scribing the first solar cell to obtain a square-shaped sub-solar cell and at least one strip-shaped sub-solar cell. The above methods improve the utilization rate of the monocrystalline silicon rod and reduce production cost.

Method for manufacturing monocrystalline silicon wafer containing arced side, method for manufacturing monocrystalline silicon cell, and photovoltaic module

Provided is a solar cell. The solar cell may include a semiconductor layer and a passivation film stack provided on a back surface of the semiconductor layer. The passivation film stack may include a first passivation layer provided on the back surface of the semiconductor layer and including a silicon-rich layer with a silicon atom concentration ranging from 5×10/cmto 2.5×10/cm; a second passivation layer provided on a surface of the first passivation layer and including an oxygen-rich and nitrogen-rich layer; and a third passivation layer provided on a surface of the second passivation layer and including at least one silicon nitride film with a gradient-varied refractive index. A first refractive index of the first passivation layer may be greater than a second refractive index of the second passivation layer and smaller than a third refractive index of the third passivation layer.

Photovoltaic module, solar cell, and method for producing solar cell

A solar cell is provided, including a substrate having a first surface and a second surface, a first dielectric layer formed on the first surface, a first doped polysilicon layer formed on the first dielectric layer, a second dielectric layer formed on the second surface, a second doped polysilicon layer formed on the second dielectric layer, a first passivation layer formed on the first doped polysilicon layer, a second passivation layer formed on the second doped polysilicon layer, first electrodes and second electrodes. The first doped polysilicon layer is doped with an N-type doping element and has a surface having a first roughness, the second doped polysilicon layer is doped with a P-type doping element and has a surface having a second roughness, and the second roughness is less than the first roughness.

The photovoltaic module includes at least one cell unit group, where the cell unit group includes multiple cell strings, and adjacent cell strings are connected by a connection structure. The connection structure includes a lead-out structure, which includes a main body portion, a first connecting portion and a second connecting portion that are arranged on the main body portion; the first connecting portion is connected to the second connecting portion, the first connecting portion is disposed in parallel to a length direction of the main body portion, and the second connecting portion extends out of the first connecting portion. In the length direction of the main body portion, the main body portion has a first edge, the second connecting portion is closer to the first edge relative to the first connecting portion, and a distance between the second connecting portion and the first edge ranges from 2 mm to 20 mm.

Photovoltaic module

Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

Provided is a busbar-free interdigitated back contact (IBC) solar cell and an IBC solar cell module. The IBC solar cell includes a semiconductor substrate, finger electrode lines and conductive lines. The finger electrode lines include first finger electrode lines and second finger electrode lines that are alternately arranged on the semiconductor substrate. The conductive lines include first conductive lines and second conductive lines that are alternately arranged. The first conductive lines are connected to the first finger electrode lines and spaced apart from the second finger electrode lines. The second conductive lines are connected to the second finger electrode lines and spaced apart from the first finger electrode lines.

Busbar-free interdigitated back contact solar cell and interdigitated back contact solar cell module

Embodiments of the present disclosure provide a method for welding cell strings and a series welding machine. The method includes: forming an arrangement of a plurality of solar cells; inspecting the arrangement of the plurality of solar cells; providing a plurality of initial welding strips including first initial welding strips and second initial welding strips, the first initial welding strips interleave with the second initial welding strips in a first direction; cutting each of the first initial welding strips at first cutting positions, and cutting each of the second initial welding strips at second cutting positions, to obtain a plurality of welding strips; moving each welding strip in a second direction to form a set of welding strips; transferring the set of welding strips onto the arrangement of the plurality of solar cells; and welding the plurality of welding strips to corresponding solar cells to form a cell string.

Method for welding cell strings and series welding machine

A solar cell, a manufacturing method therefor, and a photovoltaic module are provided. The solar cell includes a substrate having a front surface and a rear surface, a passivation stack disposed on the front surface, and a tunneling oxide layer and a doped conductive layer disposed on the rear surface. The passivation stack includes an oxygen-containing dielectric layer, a first passivation layer and a second passivation layer. The first passivation layer includes a first interface adjacent to the oxygen-containing dielectric layer and a second interface adjacent to the second passivation layer, the second passivation layer includes a third interface opposite to the second interface, a nitrogen content and a silicon content at the second interface are higher than those at the first interface and the third interface, respectively, and an oxygen content at the second interface is lower than that at the first interface and the third interface, respectively.

Solar cell, method for manufacturing the same, and photovoltaic module

A solar cell and a photovoltaic module including the solar cell. The solar cell includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a first dielectric layer located on the first surface; a first N+ doped layer located on a surface of the first dielectric layer; a first passivation layer located on a surface of the first N+ doped layer; a first electrode located on a surface of the first passivation layer; a second dielectric layer located on the second surface; a first P+ doped layer located on a surface of the second dielectric layer; a second passivation layer located on a surface of the first P+ doped layer; and a second electrode located on a surface of the second passivation layer.

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Zhejiang, China

Hao Jin