Samsung Electronics Co., Ltd.

K. C. Tech Co., Ltd.

Soulbrain Co., Ltd.

Hao Cui

Il Young Yoon

Jong Hyuk Park

Seungho Park

Seung Ho Park

Seung-Ho Park

Jun-Seok Lee

Sanghyun Park

In-seak Hwang

Byoung-ho Kwon

Sang-kyun Kim

Jung Hun Kim

Sang Kyun Kim

Bo Un Yoon

Yun-Jeong Kim

Hyun Goo Kong

Myeong Hoon Han

Wonki Hur

Hee Sook Cheon

Se Yun Park

Sang Mi Lee

Woo In Lee

Kyung-il Park

A polishing composition and a method of fabricating a semiconductor device using the same, the polishing composition including an abrasive; a first additive that includes a C5 to C30 hydrocarbon including an amide group and a carboxyl group or a C5 to C30 hydrocarbon including two or more amine groups; and a second additive that includes a sulfonic acid, a sulfonate, or a sulfonate salt.

Polishing composition and method of fabricating semiconductor device using the same

A semiconductor device that includes a plurality of word lines disposed on a substrate in which p-type and n-type active regions are defined, and extends in a first direction. A plurality of bit lines is disposed on the plurality of word lines and extends in a second direction, perpendicular to the first direction. A plurality of memory cells is disposed between the plurality of word lines and the plurality of bit lines and each includes a data storage pattern. The plurality of memory cells includes a plurality of dummy memory cells and a plurality of main memory cells. An upper surface of the data storage pattern of the main memory cells is higher than an upper surface of the data storage pattern of the dummy memory cells.

Semiconductor device having plural dummy memory cells

A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.

Slurry compositions for polishing a metal layer and methods for fabricating semiconductor devices using the same

In a method of manufacturing a semiconductor device, mask patterns are formed on a semiconductor substrate. An organic layer is formed on the semiconductor substrate to cover the mask patterns. An upper portion of the organic layer is planarized using a polishing composition. The polishing composition includes an oxidizing agent and is devoid of abrasive particles.

Methods of manufacturing semiconductor devices

Growing community of inventors

Suwon-si, South Korea

Hao Cui