Hon Hai Precision Industry Co., Ltd.

Hon Young Semiconductor Corporation

Hao-chung Kuo

Jun-Da Chen

Yu-Heng Hong

Wen-Cheng Hsu

Kuo-Fong Tseng

Kuang-Hao Chiang

Tzu-Hsiang Lan

Kuo-bin Hong

Yi-Kai Hsiao

Fu-He Hsiao

An optical detection system includes a first optical transmitter module, a first optical receiver module, a second optical receiver module, and a second optical transmitter module. The first optical transmitter module is configured to emit detection light. A first light transmitter of the first optical transmitter module includes a photonic crystal surface emitting laser. A first metasurface of the first optical transmitter module is located above the first light transmitter. The second optical receiver module is configured to receive first communication light. The second communication light has information of signal light and information in first communication light. A second light transmitter of the second optical transmitter module includes a photonic crystal surface emitting laser. A second metasurface of the second optical transmitter module is located above the second light transmitter.

Optical detection system, vehicle communication system having the same and operating method thereof

A manufacturing method of a semiconductor device includes the following steps. A base region is formed in a substrate. A protective layer is formed on the substrate and covers the base region. First and second sacrificial layers are formed on the substrate and cover the protective layer. A source region, a well region, and a junction field effect transistor (JFET) region are formed in the substrate. When the source region, the well region, and the JFET region are formed in sequence, the source region and the well region are formed by the first sacrificial layer, and the JFET region is formed by the second sacrificial layer. When the JFET region, the well region, and the source region are formed in sequence, the JFET region is formed by the first sacrificial layer, and the well region and the source region are formed by the second sacrificial layer.

Manufacturing method of a semiconductor device with junction field effect transistor

The present disclosure provides a bolometer including a substrate, a reflecting mirror on the substrate, and a temperature sensing unit above the reflecting mirror. The temperature sensing unit includes a first insulating layer, a thermistor on the first insulating layer, a second insulating layer on the thermistor, an electrode layer in the second insulating layer and right above the thermistor, and a metal meta-surface in the second insulating layer and right above the electrode layer. The electrode layer includes a plurality of electrodes separated from each other. A projection region of the metal meta-surface on the thermistor is equal to or larger than the thermistor.

Bolometer and manufacturing method of temperature sensing unit

A light-emitting device array includes a first light-emitting device, a second light-emitting device, and a third light-emitting device. A first beam shaping structure of the first light-emitting device is configured to convert light emitted by a first light-emitting structure of first light-emitting device into first structured light. A second beam shaping structure of the second light-emitting device is configured to convert light emitted by a second light-emitting structure of second light-emitting device into second structured light. Speckle patterns and spatial distributions of the first structured light and the second structured light on a projection plane are the same. A third beam shaping structure of the third light-emitting device is configured to convert light emitted by a third light-emitting structure of third light-emitting device into third structured light.

Light-emitting device array and optical transceiver system having the same

Growing community of inventors

Taipei, Taiwan

Hao-chung Kuo