Semileds Optoelectronics Co., Ltd.

Hao-Chung Cheng

Chen-Fu Chu

Feng-Hsu Fan

Trung Tri Doan

Wen-Huang Liu

Chao-Chen Cheng

David Trung Doan

Yang Po Wen

A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.

Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication

A method for fabricating semiconductor dice includes the steps of providing a wafer assembly having a substrate and semiconductor structures on the substrate; and defining the semiconductor dice on the substrate. The method also includes the step of separating the substrate from the semiconductor structures by applying a first laser pulse to each semiconductor die on the substrate having first parameters selected to break an interface between the substrate and the semiconductor structures and then applying a second laser pulse to each semiconductor die on the substrate having second parameters selected to complete separation of the substrate from the semiconductor structures. The method can also include the steps of forming one or more intermediate structures between the semiconductor dice on the substrate configured to protect the semiconductor dice during the separating step.

Method for fabricating semiconductor dice by separating a substrate from semiconductor structures using multiple laser pulses

Growing community of inventors

Pingtung County, Taiwan

Hao-Chung Cheng