Taiwan Semiconductor Manufacturing Comp. Ltd.

Hao Chun Liu

Ching-Wen Hsiao

Chen-Shien Chen

Mirng-Ji Lii

Chen-Cheng Kuo

Yao-Chun Chuang

Kuo-Ching Hsu

Chita Chuang

Yu-Chen Hsu

Ming-Da Cheng

Po-Hao Tsai

Chih-Hsien Lin

Tzy-Kuang Lee

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a die structure including a plurality of die regions and a plurality of first seal rings. Each of the plurality of first seal rings surrounds a corresponding die region of the plurality of die regions. The semiconductor device further includes a second seal ring surrounding the plurality of first seal rings and a plurality of connectors bonded to the die structure. Each of the plurality of connectors has an elongated plan-view shape. A long axis of the elongated plan-view shape of each of the plurality of connectors is oriented toward a center of the die structure.

Bonding structures in semiconductor packaged device and method of forming same

A method comprises depositing a protection layer over a first substrate, wherein the first substrate is part of a first semiconductor die, forming an under bump metallization structure over the protection layer, forming a connector over the under bump metallization structure, forming a first dummy plane along a first edge of a top surface of the first semiconductor die and forming a second dummy plane along a second edge of the top surface of the first semiconductor die, wherein the first dummy plane and the second dummy plane form an L-shaped region.

Stress reduction apparatus and method

A method includes forming a patterned mask comprising a first opening, plating a conductive feature in the first opening, depositing a passivation layer on a sidewall and a top surface of the conductive feature, and patterning the passivation layer to form a second opening in the passivation layer. The passivation layer has sidewalls facing the second opening. A planarization layer is dispensed on the passivation layer. The planarization layer is patterned to form a third opening. After the planarization layer is patterned, a portion of the planarization layer is located in the second opening and covers the sidewalls of the passivation layer. An Under-Bump Metallurgy (UBM) is formed to extend into the third opening.

Passivation layer and planarization layer and method of forming the same

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Hsinchu, Taiwan

Hao Chun Liu