Taiwan Semiconductor Manufacturing Comp. Ltd.

Hao-Chih Yuan

Shih-Shiung Chen

Yuan-Ko Hwang

Fei-Yun Chen

Jen-Shian Shieh

Nan-Huan Kuan

The present subject matter relates to a method of stripping a photoresist after the photoresist film has been subjected to a high dose and high energy ion implant process. The method involves soaking the photoresist film in DI water, dry etching with oxygen plasma, and immersing in Caro's acid solution to improve the throughput of removing the film from the underlying substrate. The method can also be used to strip photoresist that has been hardened or altered by other types of processes such as dry etch transfer steps and chemical treatments. In some applications, the dry etching step may be omitted from the stripping process or the dry etching step may be combined with the water soak in an integrated process.

Effective photoresist stripping process for high dosage and high energy ion implantation

A method for manufacturing capacitors is disclosed. The method is applicable to a capacitor whose upper electrode area is smaller than the lower electrode area. It is featured in that a material, such as a TiN hard mask, is inserted between the conventional electrode metal layer and photo resist layer. This enables one to perform the in-situ photo resist layer removal step after dry etching the upper electrode metal. Since the photo resist layer removal step uses oxygen plasma, the surface of the lower electrode polysilicon is formed with a protective oxide layer because the dielectric layer is etched during the process of dry etching the upper electrode metal. Using the disclosed method can solve the corrosion problem on the upper electrode metal and avoid the lower electrode polysilicon from being corroded by the wet etchant.

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Taipei, Taiwan

Hao-Chih Yuan