Sun Microsystems, Inc.

Advanced Ion Beam Technology, Inc.

Hao Chen

Song C Kim

Stephen E Savas

Susan Felch

Tienyu Sheng

William Divergilio

A plasma-based material modification system for material modification of a work piece may include a plasma source chamber coupled to a process chamber. A support structure, configured to support the work piece, may be disposed within the process chamber. The plasma source chamber may include a first plurality of magnets, a second plurality of magnets, and a third plurality of magnets that surround a plasma generation region within the plasma source chamber. The plasma source chamber may be configured to generate a plasma having ions within the plasma generation region. The third plurality of magnets may be configured to confine a majority of electrons of the plasma having energy greater than 10 eV within the plasma generation region while allowing ions from the plasma to pass through the third plurality of magnets into the process chamber for material modification of the work piece.

Plasma-based material modification using a plasma source with magnetic confinement

A dynamic set/reset circuit is provided with a first feedback line and a second feedback line. The first feedback line provides an interlocked feedback signal which permits high frequency operation of the set/reset circuit. The second feedback line prevents the interlocked feedback signal from causing the circuit to improperly change state until the next cycle of the circuit. In this manner, the circuit will operate properly despite an unexpectedly wide pulse on an input line. The dual feedback can be used on the set or reset inputs of a set/reset circuit, or both, and the set/reset circuit can be used in various logic and high speed applications, such as within a microprocessor.

Dynamic set/reset circuit with dual feedback

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Fremont, CA, United States of America

Hao Chen