Applied Materials, Inc.

Alibaba Group Holding Limited

Hao A Lu

Gerald Z Yin

Robert W Wu

Jian Ding

Ruiping Wang

Nianci Han

Zhigang Hua

Xingwen Zhang

Shuang Yang

Methods, systems, and apparatus, including computer programs encoded on computer storage media, for determining routing using reinforcement learning (RL) are provided. One of the methods includes: initializing a state of an RL model based on a routing solution, wherein the RL model comprises a plurality of improvement actions for applying to the state; applying one or more of the plurality of improvement actions to the state to obtain updated routing solutions until a predetermined condition is satisfied; applying a perturbation action to obtain a perturbed routing solution and feeding the perturbed routing solution back to the RL model for the RL model to perform the applying one or more of the plurality of improvement actions according to the policy; and determining a routing solution with a minimum cost from the updated routing solutions.

System and method for routing optimization

A plasma etch process, particularly applicable to an self-aligned contact etch in a high-density plasma for selectively etching oxide over nitride, although selectivity to silicon is also achieved. In the process, a fluoropropane or a fluoropropylene is a principal etching gas in the presence of a substantial amount of an inactive gas such as argon. Good nitride selectivity has been achieved with hexafluoropropylene (C F ), octafluoropropane (C F ), heptafluoropropane (C HF ), hexafluoropropane (C H F ). The process may use one or more of the these gases in proportions to optimize selectivity and a wide process window. Difluoromethane (CH F ) or other fluorocarbons may be combined with the above gases, particularly with C F for optimum selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.

Plasma process for selectively etching oxide using fluoropropane or fluoropropylene

A composite silicon carbide article and its method of making in which a surface layer or film of silicon carbide is deposited, for example by chemical vapor deposition (CVD), over a free standing silicon carbide substrate, as is formed by bulk methods such as sintering and hot pressing. The article is advantageously used in a plasma reactor, especially an oxide etcher for semiconductor fabrication, and may be any of several parts including the chamber wall, chamber roof, or collar around the wafer. The bulk SiC provides an inexpensive and strong support structure of perhaps a complex shape while the CVD SiC film has advantages for plasma processing and may be tailored to particular uses. The composite SiC structure is particularly useful in that the electrical conductivities of the bulk SiC and film SiC may be separately controlled so as to provide, among many possibilities, a grounding plane, a window for RF electromagnetic radiation, or both. The ultra-high purity achieved in CVD silicon carbide also benefits the control of micro-contamination inside the reactor chamber, a key factor for increased device yield.

Silicon carbide composite article particularly useful for plasma reactors

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San Mateo, CA, United States of America

Hao A Lu