Samsung Electronics Co., Ltd.

Hanvit Yang

Kihyun Hwang

Jintae Noh

Sangmin Kang

Taehun Kim

Dongwoo Kim

Jung Ho Kim

Yong-Hoon Son

Jung-Hwan Kim

Changhee Lee

Myoungbum Lee

Daehyun Jang

Bio Kim

Jaehun Jung

Dongchul Yoo

Jihoon Choi

Sunghae Lee

Sangryol Yang

Ju-Eun Kim

Chaeho Kim

Su-Jin Shin

Suhwan Lim

Nambin Kim

Samki Kim

Hyeongwon Choi

A semiconductor device includes a lower structure including a semiconductor substrate and circuit devices on the semiconductor substrate; a stack structure including interlayer insulating layers and gate electrodes alternating in a vertical direction; and a channel structure penetrating the stack structure. The channel structure includes a core insulating layer, a channel layer, a gate dielectric layer, and a channel pad. A portion of the channel pad overlaps an uppermost gate electrode among the gate electrodes in a horizontal direction. The channel pad includes a first pad layer and a second pad layer on the first pad layer. The second pad layer includes doped polysilicon that is doped with impurities and having N-type conductivity. The first pad layer includes at least one of an undoped polysilicon region and a doped polysilicon region having N-type conductivity and having an impurity concentration lower than an impurity concentration of the second pad layer.

Semiconductor devices and data storage systems including the same

A mold including insulation layers and sacrificial layers is formed on a substrate. A channel hole is formed through the mold. A first deposition process is performed using a first precursor including silane and a second precursor including silane and a halogen element to form a first preliminary blocking layer on a sidewall of the channel hole. A second deposition process is performed using the first precursor to form a second preliminary blocking layer on the sidewall of the channel hole. The first and second preliminary blocking layers form a third preliminary blocking layer. An oxidation process is performed on the third preliminary blocking layer to transform the third preliminary blocking into a first blocking layer. A charge storage layer, a tunnel insulation layer, and a channel layer are formed on the first blocking layer. The sacrificial layer is replaced with a gate electrode.

Vertical memory devices and methods of manufacturing the same

A semiconductor device includes a substrate, a lower structure on the substrate, the lower structure including a first wiring structure, a second wiring structure, and a lower insulating structure covering the first and second wiring structures, a first pattern layer including a plate portion and a via portion, the plate portion being on the lower insulating structure and the via portion extending into the lower insulating structure from a lower portion of the plate portion and overlapping the first wiring structure, a graphene-like carbon material layer in contact with the via portion and the first wiring structure between the via portion and the first wiring structure, gate layers stacked in a vertical direction perpendicular to an upper surface of the substrate and spaced apart from each other on the first pattern layer, and a memory vertical structure penetrating through the gate layers in the vertical direction.

Semiconductor device

The inventive concepts provide methods of manufacturing a semiconductor device. The method includes forming a thin layer structure including insulating layers and sacrificial layers alternately and repeatedly stacked on a substrate, forming a through-hole penetrating the thin layer structure and exposing the substrate, forming a semiconductor layer covering an inner sidewall of the through-hole and partially filling the through-hole, oxidizing a first portion of the semiconductor layer to form a first insulating layer, and injecting oxygen atoms into a second portion of the semiconductor layer. An oxygen atomic concentration of the second portion is lower than that of the first insulating layer. Oxidizing the first portion and injecting the oxygen atoms into the second portion are performed using an oxidation process at the same time.

Method of manufacturing a three-dimensional semiconductor memory device

Inventive concepts provide semiconductor memory devices and methods of fabricating the same. A stack structure and vertical channel structures are provided on a substrate. The stack structure includes insulating layers and gate electrodes alternately and repeatedly stacked on the substrate. A first vertical channel pattern is disposed in a lower portion of each vertical channel structure. A gate oxide layer is formed on a sidewall of the first vertical channel pattern. A recess region is formed in the substrate between the vertical channel structures. A buffer oxide layer is formed in the recess region. An oxidation inhibiting layer is provided in the substrate to surround the recess region. The oxidation inhibiting layer is in contact with the buffer oxide layer and inhibits growth of the buffer oxide layer.

Semiconductor device and method of fabricating the same

Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening penetrating the first and second layers. The methods may also include forming a first semiconductor pattern in the opening. The methods may additionally include forming an insulation pattern on the first semiconductor pattern. The methods may further include forming a second semiconductor pattern on the insulation pattern. The methods may also include providing dopants in the first semiconductor pattern. Moreover, the methods may include thermally treating a portion of the first semiconductor pattern to form a third semiconductor pattern.

Methods of forming a semiconductor device

Growing community of inventors

Yongin-si, South Korea

Hanvit Yang