Air Products and Chemicals, Inc.

Tokyo Electron Limited

Hansong Cheng

Xinjian Lei

Manchao Xiao

Daniel P Spence

John Anthony Thomas Norman

Diwakar Garg

Guido Peter Pez

Bing Han

Alan Charles Cooper

Aaron Raymond Scott

Eduardo Machado

Pablo Ordejon

Mark Leonard O'Neill

Eugene Joseph Karwacki, Jr

Liu Yang

Chenggang Zhou

Jinping Wu

Kazuhide Hasebe

Scott Jeffrey Weigel

Gauri Sankar Lal

David A Roberts

Sergei Vladimirovich Ivanov

Thomas R Gaffney

Moo-Sung Kim

Frederick Carl Wilhelm

Masato Yonezawa

Atteye Houssein Abdourazak

Heather Regina Bowen

Masanobu Matsunaga

Michael Ulman

Bo Han

Liam Quinn

Chia-Chien Lee

Larry David Bagzis

John Bruce Appleby

The present invention is related to a family of Group 4 metal precursors represented by the formula:M(OR)(RC(O)C(R)C(O)OR)wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein Ris selected from the group consisting of a linear or branched Calkyl and a Caryl, preferably methyl, ethyl or n-propyl; Ris selected from the group consisting of branched Calkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a Caryl; Ris selected from the group consisting of hydrogen, Calkyls, and a Caryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60&#xb0; C.

Group 4 metal precursors for metal-containing films

Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein Ris independently selected from hydrogen, a linear or branched Cto Calkyl, a linear or branched Cto Calkenyl, a linear or branched Cto Calkynyl, a Cto Calkoxy, a Cto Cdialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and Ris independently selected from hydrogen, a linear or branched Cto Calkyl, a linear or branched Cto Calkenyl, a linear or branched Cto Calkynyl, a Cto Calkoxy, a Cto Cdialkylamino, a Cto Caryl, a linear or branched Cto Cfluorinated alkyl, and a Cto Ccyclic alkyl group.

Organoaminosilane precursors and methods for depositing films comprising same

This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Low temperature deposition of silicon-containing films

Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):(RRN)SiR&#x2003;&#x2003;(I)wherein substituents Rand Rare each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents Rand Rcomprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO, PO(OR), OR, SO, SO, SOR and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, Ris chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

Precursors for depositing silicon-containing films and methods for making and using same

The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of:

Aminosilanes for shallow trench isolation films

A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

Methods for depositing metal films onto diffusion barrier layers by CVD or ALD processes

A plurality of metal-containing complexes of a polydentate beta-ketoiminate, one embodiment of which is represented by the structure are shown: 

Metal complexes of polydentate beta-ketoiminates

We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate &#x3b2;-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium.

Materials for adhesion enhancement of copper film on diffusion barriers

Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: 

Metal complexes of tridentate BETA -ketoiminates

Metal complexes of tridentate &#x3b2;-ketoiminates

A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the surface of the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, and mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

Diffusion barrier layers and processes for depositing metal films thereupon by CVD or ALD processes

Processes are provided for the storage and release of hydrogen by means of a substantially reversible catalytic hydrogenation of extended pi-conjugated substrates which include large polycyclic aromatic hydrocarbons, polycyclic aromatic hydrocarbons with nitrogen heteroatoms, polycyclic aromatic hydrocarbons with oxygen heteroatoms, polycyclic aromatic hydrocarbons with alkyl, alkoxy, nitrile, ketone, ether or polyether substituents, pi-conjugated molecules comprising 5 membered rings, pi-conjugated molecules comprising six and five membered rings with nitrogen or oxygen hetero atoms, and extended pi-conjugated organic polymers. The hydrogen, contained in the at least partially hydrogenated form of the extended pi-conjugated system, can be facilely released for use by a catalytic dehydrogenation of the latter in the presence of a dehydrogenation catalyst which can be effected by lowering the hydrogen gas pressure, generally to pressures greater than 0.1 bar or raising the temperature to less than 250&#xb0; C. or less, or by a combination of these two process parameters.

Hydrogen storage by reversible hydrogenation of pi-conjugated substrates

Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes

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Allentown, PA, United States of America

Hansong Cheng