Lg Display Co., Ltd.

Hanseok Lee

Jinpil Kim

Jungjune Kim

Hyungil Na

Hyeji Jeon

SeungRyull Park

HyunJin Park

Han Jin Ahn

Su-Bin Lee

Seungyong Jung

Youngyoung Chang

Youngjin Yi

SungSoo Shin

Jungyul Yang

WonSang Ryu

Younghun Han

YounGyoung Chang

Sangmo Byun

HyeJI Jeon

Disclosed is a thin film transistor substrate comprising a substrate; a first thin film transistor on the substrate, the first thin film transistor including a first active layer and a first gate electrode; a second thin film transistor on the substrate, the second thin film transistor including a second active layer and a second gate electrode above the first active layer and the first gate electrode; a first insulating layer between the first gate electrode and the second active layer; and; and a first connection electrode connecting together the first active layer and the second active layer, the first connection electrode extending through a first contact hole in the first insulating layer and is in contact with each of the first active layer and the second active layer and a display apparatus including the same.

Thin film transistor substrate and display apparatus comprising the same

Disclosed are a thin-film transistor array substrate for a high-resolution digital X-ray detector and a high-resolution digital X-ray detector including the same, in which a photo-sensitivity is improved by increasing a fill factor, a stability of the PIN diode is improved, and generation of parasitic capacitance is reduced or minimized. In one embodiment, the PIN diode maximally extends so that electrodes and contact holes of the thin-film transistor is disposed inside the PIN diode. A planarization layer of organic material is present between the electrodes or wirings. Further, a light receiving region of the PIN diode is increased or maximized by positioning the bias line to overlap the data line or the gate line so as not to overlap with the PIN diode.

Thin film transistor array substrate for high-resolution digital X-ray detector and high-resolution digital X-ray detector including the same

An array substrate for a digital X-ray detector, and an X-ray detector including the same are disclosed, which reduce or minimize a contact resistance between a bias electrode and a PIN diode, and also improve a fill factor of the PIN diode. In the array substrate, a dual bias electrode in which a second bias electrode formed of a transparent conductive material is connected to a first bias electrode that is additionally connected to an upper electrode of the PIN diode, such that total resistance of the bias electrodes is reduced and a line width of the first bias electrode formed of a non-transparent material is reduced, resulting in an increased fill factor of the PIN diode.

Array substrate for digital X-ray detector and X-ray detector including the same

The present disclosure relates to a digital X-ray detector, which includes a base substrate; a metal layer disposed on a bottom face of the base substrate; an elements-array disposed on a top face of the base substrate; a ground electrode disposed on a top face of the base substrate and electrically connected to the elements-array; a scintillator layer disposed on the elements-array; and a reflective plate disposed on the scintillator layer. Thus, a static-electricity discharge path along which static-electricity from the reflective plate moves through the ground electrode to the metal layer may be secured. This may increase or maximize an effective ground region, such that the static-electricity generated from the top and bottom of the digital X-ray detector can be more efficiently discharged out.

Digital X-ray detector

An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are disclosed. The array substrate reduces a step difference of a PIN diode, removes a bent part from a lower part to reduce characteristic deterioration of the PIN diode, and increases the size of a formation region of the PIN diode to increase a fill factor. To this end, the array substrate allows a source region of an active layer included in a thin film transistor to be in surface contact with a lower electrode of the PIN diode, and disposes the lower electrode over a planarized source region or a base substrate, such that a step difference of the PIN diode is reduced and fill factor is improved.

Array substrate for digital X-ray detector, digital X-ray detector including the same, and method for manufacturing the same

Disclosed is a pixel array panel for a digital X-ray detector, the pixel array panel including a plurality of pixel regions, wherein the pixel array panel includes: a first electrode corresponding to each pixel region; a plurality of PIN (P-type/I-type/N-type semiconductors) layers disposed on the first electrode and arranged in a matrix form; and a second electrode disposed on each PIN layer.

Pixel array panel and digital x-ray detector comprising the same

Disclosed are a thin-film transistor array substrate for a high-resolution digital X-ray detector and a high-resolution digital X-ray detector including the same in which a photo-sensitivity is improved by increasing a fill factor, and interference between PIN diodes is minimized, and step coverage of the PIN diode is improved to improve stability of the PIN diode. To those ends, an area of the PIN diode is maximized, and a pixel electrode of the PIN diode is disposed inside the PIN layer. Further, a clad layer made of inorganic material is formed in an edge region and/or a contact hole region of the pixel electrode. Thus, a leakage current resulting from concentrating an electric field on a curved region may be minimized.

An array substrate for a digital X-ray detector can include a base substrate; a thin film transistor disposed on the base substrate; a PIN diode including a lower electrode electrically connected to the thin film transistor, a first PIN layer disposed on the lower electrode, and an upper electrode disposed on the first PIN layer; a second PIN layer spaced apart from the PIN diode, the second PIN layer being disposed on the thin film transistor; and a bias electrode electrically connected to the upper electrode.

Array substrate for digital x-ray detector, digital x-ray detector including the same, and method for manufacturing the same

A substrate for a digital X-ray detector configured to sense an X-ray signal, a detector including the same, and a manufacturing method thereof. According to an embodiment of the present disclosure, the substrate for an X-ray detector includes an interlayer dielectric layer arranged on a thin film transistor, a first passivation layer and a second passivation layer arranged on the interlayer dielectric layer, and a hydrogen blocking layer arranged on at least one of the first passivation layer and the second passivation layer in a transistor region corresponding to the thin film transistor.

Substrate for digital x-ray detector, digital x-ray detector including the same and manufacturing method thereof

An array substrate for a digital X-ray detector and the digital X-ray detector including the same are disclosed. The array substrate effectively protects a PIN diode from external moisture or water, maximizes a light transmission region of a PIN diode, and reduces resistance by maximizing the region of a bias wiring. To this end, a closed-loop bias electrode formed to cover a circumferential surface of a PIN diode is used. In detail, the bias electrode includes a closed loop portion and a contact extension portion. The contact extension portion extends from one end of the closed loop portion so as to directly contact an upper electrode, and includes a hollow part therein.

Array substrate for digital X-ray detector, and digital X-ray detector including the same

An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are provided. A thin film transistor (TFT) array substrate for a digital X-ray detector includes: a base substrate, a thin film transistor over the base substrate, a lower electrode connected to the thin film transistor, a positive-intrinsic-negative (PIN) layer over the lower electrode, the PIN layer including: an N-type semiconductor layer, an intrinsic semiconductor layer, and a P-type semiconductor layer, a bias electrode over the PIN layer, and an upper electrode covering the PIN layer and the bias electrode.

Provided is a method of manufacturing new liquid crystal display device according to an embodiment of the present invention. Firstly, an alignment film is formed on a substrate. The alignment film is divided into a first alignment film formed using, as a precursor, liquid-state polyimide that contains a photodecomposition substance and a second alignment film formed using, as a precursor, a polyamic acid that does not contain a photodecomposition substance. UV light is irradiated to the alignment film, and decomposed substances formed by irradiation of the UV light is removed by an at least two-step removing process. By the method of manufacturing a liquid crystal display device according to the exemplary embodiment of the present disclosure, bright spots are minimized in pixels and a brightness of black is lowered, so that a liquid crystal display device with a high contrast ratio can be realized.

Liquid crystal display device and method of manufacturing the same

An alignment film for liquid crystal display device includes a first portion positioned towards to the liquid crystal layer and a second portion positioned away from the liquid crystal layer. The first portion provides improved anchoring force while the second portion exhibits a lower volume resistance than the first portion. Thus, AC image sticking and DC image sticking can be minimized at the same time.

Growing community of inventors

Goyang-si, South Korea

Hanseok Lee