Schott Ag

Nukem Limited

Az Electronic Materials (luxembourg) S.a.r.l.

Planar Systems, Inc.

Helmholtz-zentrum Berlin Fuer Materialien Und Energie Gmbh

Hans-Werner Schock

Sey-Shing Sun

Simone Monika Ritter

Uwe Kolberg

Burkhard Speit

Richard T Tuenge

Klaus Rode

Gert Hewig

Jorg Worner

Bernd Schurich

Helge Vogt

Sandra Stojanovic

Randall C Wentross

T Achim Oberacker

Reiner H Mauch

Karl-Otto Velthaus

Raik Hesse

Daniel Abou-Ras

Jan Schniebs

Thomas Unold

Christine Köble

Christian Kaufmann

Raymund Schäffler

The invention relates to a thin-film solar cell () comprising a substrate () of metal or glass, a dielectric barrier layer () based on a polysilazane and a photovoltaic layer structure () of the copper-indium sulphide (CIS) type or the copper-indium selenide (CIGSe) type.

Solar cells with a barrier layer based on polysilazane

A method for in situ determination of a material composition of optically thin layers deposited from a vapor phase onto a substrate includes irradiating the substrate with incoherent light of at least three different wavelengths, optically detecting in a spatially resolved manner a reflection intensity of a diffuse or a direct light scattering emanating from a deposited layer outside of a total reflection, concurrently providing numerical values of the detected reflection intensity to an optical layer model based on general line transmission theory, ascertaining values for the optical layer parameters of the deposited layer from the optical layer model for the at least three different wavelengths by numerically adapting the optical layer model to a time characteristic of the detected reflection intensities, and quantitatively determining a material composition of the deposited layer from the ascertained values by comparing the ascertained values to standard values.

Method for the in-situ determination of the material composition of optically thin layers

A cadmium-free optical steep edge filter comprising I-III-VI compound semiconductor systems of stoichiometric or non-stoichiometric composition, where the I-III-VI compound semiconductors are systems with one or more of the following elements:

Cadmium-free optical steep edge filters

A multi-source reactive deposition process for preparing a phosphor layer for an AC TFEL device having the chemical formula M.sup.II M.sup.III.sub.2 X.sub.4 :RE, where M.sup.II is a group II metal taken from the group magnesium, calcium, strontium and barium, M.sup.III is a group III metal taken from the group aluminum, gallium and indium, X is taken from the group sulfur and selenium, and RE comprises a rare earth activator dopant taken from the group cerium and europium is disclosed. The phosphor film is formed in crystalline form on a substrate heated to a temperature between 400.degree. and 800.degree. C. by depositing more than one deposition source chemical where at least one of the deposition source chemicals of the group II metal or the group III metal is a compound.

Multi-source reactive deposition process for the preparation of blue

In order to provide an uncomplicated and economical front surface contact for photovoltaic cells (10) with good current discharge capability and high radiation permeability, the front surface contact (20) is composed of several layer (22, 24, 26) which are essentially unaligned with respect each other. The layers (22, 24, 26) are composed of different materials, which guarantes good ohmic coupling to the light incident semiconductor layer, good collection of free charge carriers in the semiconductor layer, and good discharge of same to a load device.

Photovoltaic cell and method for its fabrication

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Stuttgart, Germany

Hans-Werner Schock