International Business Machines Corporation

Siemens Aktiengesellschaft

Kabushiki Kaisha Toshiba

Infineon Technologies Ag

Siemens Microelectronics Limited

Hans W Poetzlberger

Herbert Palm

Lawrence Alfred Clevenger

Kenneth Parker Rodbell

Ronald G Filippi

Darryl D Restaino

Tomio Katata

Mark Hoinkis

Mark A Jaso

Roy Charles Iggulden

Florian Schnabel

Stefan Weber

Chi-Hua Yang

Hideaki Aochi

Wolf-Dieter Muenz

Jeffery L Hurd

Ebrahim A Mehter

A conductor for interconnecting integrated circuit components having improved reliability. The conductor includes a liner surrounding at least three surfaces of the conductor, producing a low textured conductor. It has been found that low textured conductor results in improved electromigration lifetime.

Device interconnection

A metal interconnect layer that fills in a via hole formed by first depositing a first Al--Cu film on the sidewalls of the via hole at a low temperature and a low sputtering power and then depositing a second Al--Cu film on the first Al--Cu film at a high temperature and high sputtering power. Sputtering is performed in two steps at low and high temperatures within the same sputtering chamber. The deposition at low temperature and low sputtering power provides good coverage in the via hole, and the deposition at high temperature and high sputtering power reduces the process time.

High throughput A1-Cu thin film sputtering process on small contact via

A method of forming aluminum contacts of submicron dimensions wherein, after formation of both vias and line openings in a silicon oxide layer, a metal stop layer is deposited, followed by deposition of aluminum. Alternatively, the metal stop layer is deposited prior to forming the vias and line openings. The excess aluminum is removed by chemical-mechanical polishing, the stop layer providing high selectivity to the chemical mechanical polishing. The stop layer is then removed. The resultant silicon oxide-aluminum surface is planar and undamaged by the chemical-mechanical polishing step.

Method of making an aluminum contact

A method is disclosed for the manufacture in electric thin film R and RC circuits of a conductor crossover. A first conductor is structured at the crossover from a TaAl double layer. A portion of the top layer of the double layer is converted to a TaAl oxide and an SiO.sub.2 layer is then applied over the TaAl oxide as a double dielectric. A second conductor is then structured over the double dielectric.

Conductor crossovers for integrated RC-circuits

Growing community of inventors

Munich, Germany

Hans W Poetzlberger