Asm International N.v.

Hans W Piekaar

Ernst H Granneman

Boudewijn G Sluijk

Hubertus A Corsius

Johannes F Westendorp

Laurens F Kwakman

Method for producing a flow of triisobutylaluminum from liquid

Method and apparatus for depositing a layer on a substrate

A process for halide etching of a semi-conductor substrate in the presence of water. Etching is realized in a reaction vessel. The process steps comprise filling of the reaction vessel with a first gas to a first pressure and subsequently filling the reaction vessel with a second gas to a second pressure after which the substrate is left in the reaction vessel for several minutes to obtain the etching required. One of the gases is HF and the other of the gases is water vapor. The etching is conducted at sub-atmospheric pressure, preferably below 50 Torr.

Method for halide etching in the presence of water of semi-conductor

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Utrecht, Netherlands

Hans W Piekaar