G-Ray Switzerland Sa

Other

Eidgenossische Technische Hochschule Zurich

Csem Centre Suisse D'electronique Et De Microtechnique Sa

Unaxis Trading Ag

Oerlikon Metco Ag, Wohlen

Pilegrowth Tech S.r.l.

G-Ray Industries Sa

Epispeed

Hans Von Känel

Claude Meylan

Rolf Kaufmann

Jurgen Ramm

Leonida Miglio

Carsten Rosenblad

Monolithic pixel detectors, systems and methods for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution comprise a Si wafer with a CMOS processed pixel readout bonded to an absorber wafer in wafer bonds comprising conducting bonds between doped, highly conducting charge collectors in the readout and highly conducting regions in the absorber wafer and poorly conducting bonds between regions of high resistivity.

Electromagnetic radiation detector based on wafer bonding

Monolithic CMOS integrated pixel detector (), and systems and methods are provided for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution. Such detectors comprise a Si wafer with a CMOS processed readout bonded to an absorber wafer in an electrically conducting covalent wafer bond. The pixel detectors, systems and methods are used in various medical and non-medical types of applications.

Electromagnetic radiation detector comprising charge transport across a bonded interface

Oxide-free, low temperature wafer bonding permits electric current to cross the covalently bonded interface unimpeded by traps, recombination centers and unintentional, defect-induced blocking barriers when interfacial defects are passivated by hydrogen diffused from shallow implants towards the interface. Systems and methods comprising oxide-free, low temperature covalent wafer bonding with passivated interface states are used in various applications requiring reduced interfacial scattering and carrier trapping and efficient charge collection across bonded interfaces.

Structures, systems and methods for electrical charge transport across bonded interfaces

CBCT including monolithic photon counting FPD for medical applications requiring real-time 3D imaging, like mammography, interventional guided procedures or external beam radiotherapy, includes CMOS processed readout electronics monolithically integrated with a single crystalline X-ray absorber by covalent wafer bonding near room temperature and adapted for single photon counting providing high energy, temporal and spatial resolution.

Photon counting cone-beam CT apparatus with monolithic CMOS integrated pixel detectors

Monolithic silicon pixel detectors, systems and methods for the detection and imaging of radiation in the form of charged particles or X-ray photons comprise a Si wafer with a CMOS processed readout communicating via implants for charge collection with an absorber forming a monolithic unit with the Si wafer to collect and process the electrical signals generated by radiation incident on the absorber. In particular, a monolithic CMOS integrated pixel detector includes several components. Such components include a p-doped silicon wafer with a resistivity of at least 1 k&#x3a9;cm (') having a front-side () comprising a CMOS processed readout electronics () comprising pixel electronics () and a backside () opposite the front side. In addition, the pixel detector includes charge collectors () communicating with the pixel electronics () and defining the pixel size. Still further, high voltage contacts () are provided. The region of silicon wafer (&#x2032;) below the charge collectors () forms the absorber layer () of pixel detector (). When the pixel detector () is in operation, the charge collectors () are disposed to receive electrical charges drifting across the absorber layer () when generated by charged particles or X-ray photons () incident on the absorber layer (). The readout electronics is disposed to convert said electrical charges into digital signals which can be stored, processed and displayed as images on a computer screen.

Monolithic silicon pixel detector, and systems and methods for particle detection

Monolithic pixel detectors, systems and methods for the detection and imaging of radiation in the form of energetic particles which may have a mass or be massless (such as X-ray photons) comprise a Si wafer with a CMOS processed readout communicating via implants for charge collection with an absorber forming a monolithic unit with the Si wafer to collect and process the electrical signals generated by radiation incident on the absorber. The pixel detectors, systems and methods are used in various medical, industrial and scientific types of applications.

Monolithic CMOS integrated pixel detector, and systems and methods for particle detection and imaging including various applications

A process for epitaxial deposition of compound semiconductor layers includes several steps. In a first step, a substrate is removably attached to a substrate holder that may be heated. In a second step, the substrate is heated to a temperature suitable for epitaxial deposition. In a third step, substances are vaporized into vapor particles, such substances including at least one of a list of substances, comprising elemental metals, metal alloys and dopants. In a fourth step, the vapor particles are discharged to the deposition chamber. In a fifth step, a pressure is maintained in the range of 10^&#x2212;3 to 1 mbar in the deposition chamber by supplying a mixture of gases comprising at least one gas, wherein vapor particles and gas particles propagate diffusively. In a sixth optional step, a magnetic field may be applied to the deposition chamber. In a seventh step, the vapor particles and gas particles are activated by a plasma in direct contact with the sample holder. In an eighth step, vapor particles and gas particles are allowed to react, so as to form a uniform epitaxial layer on the heated substrate by low-energy plasma-enhanced vapor phase epitaxy.

System and process for high-density, low-energy plasma enhanced vapor phase epitaxy

Structures and methods for producing active layer stacks of lattice matched, lattice mismatched and thermally mismatched semiconductor materials, with low threading dislocation densities, no layer cracking and minimized wafer bowing, by using epitaxial growth onto elevated substrate regions in a mask-less process.

Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication

The present invention discloses an X-ray imaging device comprising an X-ray absorber that comprises a plurality of semiconductor layers. The plurality of semiconductor layers comprise a substrate having a backside; and at least one absorption layer adapted to absorb at least one X-ray photon impinging on the at least one absorption layer that is adapted to correspondingly generate in response to the at least one impinging X-ray photon at least one electron-hole pair; and a readout unit, wherein the readout unit is operatively coupled to the X-ray absorber such to enable readout of the at least one electron-hole pair. Additional and alternative embodiments are described and claimed.

X-ray imaging device and method for the manufacturing thereof

Method for making a semiconductor structures comprising the steps:&#x2014;forming a virtual substrate on a silicon substrate with a graded SiGelayer and a non-graded SiGelayer, using a high-density, low-energy plasma enhanced chemical vapor deposition (LEPECVD) process with a growth rate above 2 nm/s, a substrate temperature between 400&#xb0; and 850&#xb0; C., and a total reactive gas flow at the gas inlet between 5 sccm and 200 sccm;&#x2014;forming an active region on the virtual substrate that comprises a Ge-channel and at least one modulation-doped layer using a low-density, low-energy plasma enhanced chemical vapor deposition (LEPECVD) process by introducing hydrogen (H) into the growth chamber, maintaining a substrate temperature between 400&#xb0; and 500&#xb0; C., and by introducing a dopant gas in a pulsed manner into the growth chamber to provide for the modulation-doped layer.

Formation of high-mobility silicon&#x2014;germanium structures by low-energy plasma enhanced chemical vapor deposition

A system and a method produce workpieces coated by PECVD with a quality sufficient for epitaxy. Included are a vacuum recipient, a plasma discharge source operationally connected to the vacuum recipient and a workpiece holder within the vacuum recipient, said plasma discharge source generating on said workpiece holder ions with an energy of below 15 eV. The plasma discharge source can be a low-voltage plasma discharge source in which at least one cathode is arranged within a cathode chamber coupled to the vacuum recipient by a diaphragm.

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Wallisellen, Switzerland

Hans Von Känel