Siemens Aktiengesellschaft

Hans Stut

Wolfgang Keller

Wolfgang Dietze

Dieter Schicketanz

Gerhard Barowski

Friedrich Ticak

Jiri Havel

Sven Konrad

Klaus Reinmuth

Heinz Drax

In a circuit configuration for the shutoff of a semiconductor component in the event of excess current, the semiconductor component has gate and cathode terminals and is controlled by the field effect. A controllable switch is connected between the gate and cathode terminals and is made conducting by a control signal. A device controls the controllable switch to a range of high on-state DC resistance when there is excess current and a shutoff signal is simultaneously present.

Circuit configuration for gentle shutoff of an MOS semiconductor

Solid-state relay, including a full-wave rectifier bridge having a first and a second d-c terminal, a thyristor having the anode thereof connected to the first terminal and the cathode thereof connected to the second terminal, a first transistor having a load circuit and a control terminal, the load circuit of the first transistor being connected to the gate and the cathode of the thyristor and the control terminal of the first transistor being connected to at least one resistor which is in turn connected to the first terminal, a second transistor having means for supplying a control current thereto and having a load circuit, a Zener diode, and a current amplifier having an input and two input terminals, one input terminal being connected to the Zener diode which is in turn connected to the control terminal of the first transistor and the other input terminal being connected through the load circuit of the second transistor to the gate terminal of the thyristor, the current amplifier having an output and two output terminals, one output terminal being connected to the first terminal through a resistor and the other output terminal being connected to the first terminal.

Solid-state relay

Solid state relay with a full-wave rectifier bridge having d-c output terminals, a thyristor, the anode and cathode of which being respectively connected to the output terminals of the rectifier bridge, a first and a second transistor, the load circuits of which being shunted across the gate-cathode path of the thyristor, the control terminal of the first transistor being connected to a first and a second resistor, the first resistor being, in turn, connected to the anode of the thyristor, and the second resistor being, in turn, connected to the cathode of the thyristor, the control terminal of the second transistor being connected to a third resistor and to a control transistor, the third resistor being, in turn, connected to the anode of the thyristor, and the control transistor being connected to the cathode of the thyristor, including a Zener diode connected in series with the first resistor.

Method of crucible-free zone-melting a semiconductor rod which includes monitoring a melting zone formed in and traveling through a semiconductor rod surrounded by an induction heating coil, producing a respective signal corresponding to values of the actual diameters d of the semiconductor rod at a crystallization interface of the melting zone, comparing the signals corresponding to the actual diameter values d with a signal corresponding to a nominal diameter value d.sub.s so as to produce a signal corresponding to a respective first control deviation .DELTA.d, continuously combining the signals corresponding to the actual diameter values d and the signal corresponding to the respective first control deviation .DELTA.d to form respective signals corresponding to a new nominal diameter value d.sub.s *, respectively, in accordance with the relationships:

Method of crucible-freeze zone-melting a semiconductor rod and apparatus

By coupling the molten zone of a semiconductor rod, which is subjected to a crucible-free zone melting operation, to the operating coil used for inductively heating the molten zone, the frequency of the generator energizing the coil is determined. At constant geometry, this frequency is a measure of the molten zone volume and can be used for control purposes. A high-frequency cable disposed between the generator and the operating coil is fully matched, so that substantially only effective power has to be transmitted.

Method and device for crucible-free floating zone melting

A device for supplying heating current to a semiconductor carrier in connection with the thermal separation from a reactance gas, and deposition of semiconductor material upon such a carrier, with the device being operative to supply various voltage-current combinations required to maintain constant temperature of the carrier during the deposition operation, with the current supplied to the carrier being initiated during zero passages of the A.C. supply, and with control of the number of oscillations, per unit of time, of the heating current supplied.

Device for deposition of semi-conductor material

An apparatus for floating melt zone processing of a semiconductor rod including an axially fixed induction heating coil wherein the heating coil is attached to a horizontal shift means having an amplitude sufficiently great to move the coil away from the rod during insertion and/or removal of the rod in the apparatus.

Apparatus for floating melt zone processing of a semiconductor rod

An apparatus for a floating zone melt processing of a semiconductor rod including a heating circuit comprised of an annular induction heating coil adapted to annularly encompass a zone of the semiconductor rod and upon activation to produce an annular melt zone on such rod, a plurality of ceramic capacitors positioned within a fluid-impermeable housing filled with a low viscosity dielectric cooling fluid, such as a transformer oil, and connected in parallel with the heating coil and hollow electric current conduits coupling the heating coil and the capacitors to the output circuit of a high frequency generator and to a hydraulic heat-exchange circuit.

Apparatus for crucible-free zone processing of a semiconductor rod

An arrangement for electrically heating a semiconductor rod which is simultaneously growing by means of materials deposited from a gas phase, wherein the heating current circuit is formed by a heating current source and an electronic switch which is controllable by a variable auxiliary voltage. The heating current is applied to a smoothing circuit by way of a rectifier circuit which is coupled with the heating current circuit. The initial voltage of the smoothing circuit is compared with a desired voltage and the difference voltage determined by this comparison serves to control the generator which supplies the auxiliary voltage. The smoothing circuit is coupled with a preamplifier whose output is connected with the movable tap of a potentiometer. A fixed terminal of the potentiometer is connected to a source which supplies the desired voltage and to the input of a subsequent control amplifier. Another fixed contact of the potentiometer is connected in a feedback circuit to the input of the preamplifier.

Apparatus for the control of electrical heating of a semiconductor rod

An electric precipitation device and a method of producing highly pure semiconductor rods, in particular semiconductor rods consisting of silicon, by means of thermal decomposition and precipitation on corresponding carrier members in which a heating current which traverses the thickening carrier member is utilized for controlling at least one additional parameter which influences the precipitation of the semiconductor material. A process computer is preferably utilized for effecting control.

Vapor deposition apparatus with computer control

A circuit for improving the accuracy of a video measuring device which removes errors caused by variations in the horizontal deflection voltage by continuously monitoring the horizontal deflection voltage and comparing it with a preset reference voltage and adjusting the horizontal deflection voltage if any variation from the reference occurs. This assures that measurements made with the video system remain accurate at all times and measurements can be made with great accuracy.

Television camera measuring devices

A method for producing highly pure silicon, or another semiconductor material, includes depositing the element from a corresponding reaction gas at the surface of several rod shaped carrier members composed of highly pure material, the carrier members being connected in series and permeated by a heating current supplied by an operational current source. In heating the serially connected carrier members, the members are first preheated by the application of a high voltage from a three phase supply, the carrier members being subdivided into groups with each group charged by a separate phase of the three phase voltage. Preheating is performed prior to connecting all of the carrier members to the operational supply.

Growing community of inventors

Grobenzell, Germany

Hans Stut