Anaren, Inc.

Ttm Technologies Inc.

Hans Peter Ostergaard

Chong Mei

Michael Len

Omar Eldaiki

Brian K Buyea

An electrical component, such as an RF device or thermal bridge, for use with a printed circuit board. The component has a first dielectric layer having a top and a bottom, a first conductive trace positioned on the bottom of the dielectric layer, and a first ground layer positioned on the bottom of the dielectric layer and spaced apart from the first conductive trace. For RF applications, a second conductive trace is positioned on top of first dielectric, a second dielectric is positioned on top of the second conductive trace, and a second ground plane is positioned on top of the second dielectric. A printed circuit board having a third conductive trace may then be coupled to the first conductive trace by a first solder layer.

High powered RF part for improved manufacturability

The present invention is directed to an impedance matching network for use at a predetermined frequency. The network includes: a low impedance port having a first impedance substantially equal to an impedance of an RF amplifier port; a first distributive transmission line network coupled to the low impedance port, the first distributive transmission line network including a plurality of first transmission lines, each first transmission line being characterized by a first characteristic impedance and a first electric line length at the predetermined frequency to form a first quasi-lumped reactive element so that the plurality of first transmission lines form a first quasi-lumped element impedance matching stage; at least one second distributive transmission line network coupled to the first distributive transmission line network and a high impedance port, the second distributive transmission line network including a plurality of second transmission lines, each second transmission line being characterized by a second characteristic impedance and a second electric line length at the predetermined frequency to form a second quasi-lumped reactive element so that the plurality of second transmission lines form at least one second quasi-lumped element impedance matching stage; and a high impedance port coupled to the at least one second quasi-lumped element impedance matching stage, the high impedance port having a second impedance substantially equal to a system impedance.

Impedance matching component

The present invention is directed to an RF device that includes a laminate structure having a ceramic layer having a predetermined thermal conductivity that is a function of a predetermined RF device operating temperature. The ceramic layer forms a first major surface of the laminate structure and a second major ceramic surface is bonded to a layer of thermoplastic material that is, in turn, bonded to a conductive layer. The thermoplastic material has a coefficient of thermal expansion that substantially matches the conductive layer. A first circuit arrangement is disposed on the first major surface of the laminate structure and it includes a first RF circuit structure having a predetermined geometry and predetermined electrical characteristics. The laminate structure is configured to dissipate thermal energy generated by the at least one first RF circuit structure via substantially the entire second major surface of the laminate structure.

Stress relieved high power RF circuit

A coupler circuit that includes two parallel coupled transmission lines (first transmission line and second transmission line) and a third transmission line, one end of the third transmission line connects to the end of first transmission line at one side, the other end of the third transmission line connects to the end of the second transmission line at the other side. Various coupling value and impedance transforming ratio can be achieved by select corresponding even and odd mode impedance of the coupled transmission lines and characteristic impedance of the crossing transmission line.

Growing community of inventors

Viborg, Denmark

Hans Peter Ostergaard