Bayer Aktiengesellschaft

Hans-Peter Baldus

Martin Jansen

Gerd Passing

Nils Perchenek

Axel Thierauf

Ralf Herborn

Dieter Sporn

Oliver Wagner

Aloys Eiling

Wolfgang Schnick

Rolf Meistring

Nils Perchenck

Josua L Offelholz

Ulrich Wannagat

Adrian Schervan

Lothar Sch&ouml;nfelder

Hannelore Benien

Marc Haltrich

A process for coating substrates with a silicon-containing protective layer by chemical vapor deposition with a silicon-containing compound of the structural formula (1):

Process for coating substrates with a silicium-containing layer

This invention relates to amorphous fibers containing Si, B and N, to a process for the production thereof and to the use thereof, and to composites containing these amorphous fibers and the production thereof.

Amorphous fibres containing Si, B and N, a process for the production

The invention relates to new amorphous, high-strength SiBN(C) fibers which are at the same time resistant to high-temperature creep, their production and use. The fibers have a strength at room temperature of &gt;2.5 GPa, a modulus of elasticity of &gt;250 GPa and a creep value m of from 0.4 to 1 (in accordance with standard BSR test, 1 hour, 1400.degree. C.).

Ceramic fibers in the system silicon-boron-nitrogen-carbon

The invention relates to new amorphous, high-strength SiBN(C) fibres which are at the same time resistant to high-temperature creep, their production and use. The fibres have a strength at room temperature of &gt;2.5 GPa, a modulus of elasticity of &gt;250 GPa and a creep value m of from 0.4 to 1 (in accordance with standard BSR test, 1 hour, 1400.degree. C.).

Process of preparing silicon-boron-nitrogen-carbon fibers

The present invention relates to a process for the production of sintered materials comprising BN, sintering additives and at least one compound selected from the group consisting of Si.sub.3 N.sub.4 and SiAlON, wherein the BN component is present in the form of crystalline particles with an average particle size &lt;2 .mu.m and the BN content amounts to between 0.1 and 34 vol-%. In the process, a single phase amorphous Si--B--N component with a specific surface &lt;1.5 m/g and optionally Si.sub.3 N.sub.4 -powder is mixed with oxidic and/or nitridic sintering additives to form a mixture, the mixture is formed into a moulded article, and the moulded article is sintered at temperatures in the range from 1,450.degree. C. to 2,100.degree. C. in an atmosphere which contains N.sub..sub.2.

Process of produciing sintered materials based on Si.sub.3 N.sub.4 /BN

The present invention relates to polymeric multinary azanes built up from units of the general formula [E(NR.sup.1 R.sup.2).sub.a (NR.sup.3).sub.b/2 ], wherein E may be B,Al,Ga,In,Si,Ge,Ti, Zr, Hf,V,Nb,Ta,Cr,Mo or W and R.sup.1,R.sup.2,R.sup.3 may be H, C.sub.1 -C.sub.6 alkyl, vinyl or phenyl; methods for the preparation of these polymers and their use as precursors for high-performance ceramics.

Polymeric multinary azanes, methods for their preparation and their use

The present invention relates to novel preceramic oligo- or polyborosilazane compounds having the structural feature Si--N--B, and to a ceramic material based on SiN and BN, to a process for the production thereof and to the use of the polyborosilazanes and the ceramic materials.

Process for the production of preceramic polyborosilazanes and ceramic

The present invention relates to new trichlorosilylamino-alanes, new aluminosilazane compounds, new oligo or polyaluminosilazane compounds having the structural feature .tbd.Si--NH--Al, a silicon-aluminium nitride ceramic powder, ceramic material based on SiN and AlN, processes for the preparation of these substances and the use of the polyaluminosilazanes and of the ceramic materials.

Silicon-aluminium nitride ceramic and precursor compounds, processes for

The present invention relates to a process for the production of low-needle silicon nitride of high .alpha.-content, wherein an amorphous nitrogen-containing silane compound is mixed with a crystalline or amorphous compound comprising the elements silicon, phosphorus and nitrogen to form a mixture which is heat-treated at temperatures above 1000.degree. C. to form the low-needle silicon nitride. The present invention also relates to the silicon-, nitrogen- and phosphorus-containing compound which is used as the starting material in the process for the production of the low-needle silicon nitride, and the process for the production of the silicon-, nitrogen-and phosphorus-containing compound.

Process fo the production of Si.sub.2 N.sub.4 using a silicon,

Silicon boron nitride ceramics are produced from polyborosilizanes obtained from polymerized Cl.sub.3 Si--NH--BClX wherein X is --Cl or --NH--Si--Cl.sub.3.

Silicon boron nitride ceramic and precursor compounds, a process for

The present invention relates to a process for the production of low-needle silicon nitride of high .alpha.-content, wherein an amorphous nitrogen-containing silane compound is mixed with a crystalline or amorphous compound comprising the elements silicon, phosphorus and nitrogen to form a mixture which is heat-treated at temperatures above 1000.degree. C. to form the low-needle silicon nitride. The present invention also relates to the silicon-, nitrogen- and phosphorus-containing compound which is used as the starting material in the process for the production of the low-needle silicon nitride, and the process for the production of the silicon-, nitrogen- and phosphorus-containing compound.

Production of Si.sub.2-x P.sub.x N.sub.2+x (NH).sub.1-x, where x=0.1 to

Silicon diimide having a carbon content of at most 0.5% by weight and a chlorine content of at most 20 ppm is prepared by reacting ammonia with organyl amino silane at 50.degree.-300.degree. C. at elevated pressure and is useful as an intermediate for high grade silicon nitride.

Growing community of inventors

Leverkusen, Germany

Hans-Peter Baldus