Wacker-chemitronic Gesellschaft Fur Elektronik-grundstoffe Mbh

Hans Oelkrug

Franz Segieth

Wilfried Von Ammon

Erich Dornberger

Peter Gerlach

A method for pulling a silicon single crystal has the single crystal being pulled at a speed defined as maximum pulling speed in the vertical direction with respect to a silicon melt held in a crucible. The value of the maximum pulling speed is approximately proportional to the axial temperature gradient in the growing single crystal.

Method for pulling a silicon single crystal

A process and an apparatus reduces the oxygen incorporation into a single crystal of silicon which is drawn by the Czochralski method. If a molding is immersed at least temporarily in the melt between the single crystal and the crucible wall during drawing of the single crystal, the oxygen content of the single crystal is reduced compared with the oxygen content of a single crystal which has been drawn without the use of the molding.

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Haiming, Germany

Hans Oelkrug