Asml Netherlands B.v.

Debye Instituut. Universiteit Ultrecht

Debye Instituut, Universiteit Utrecht

Hans Meiling

Johannes Hubertus Josephina Moors

Bastiaan Matthias Mertens

Martinus Hendrikus Antonius Leenders

Erik Roelof Loopstra

Gert-Jan Heerens

Norbertus Benedictus Koster

Erik Leonardus Ham

Willem Van Schaik

Hendricus Johannes Maria Meijer

Jan Evert Van Der Werf

Robert Gabriël Maria Lansbergen

Rudolf Emmanuel Isidor Schropp

Sjoerd Nicolaas Lambertus Donders

Vadim Yevgenyevich Banine

Lucas Henricus Johannes Stevens

Hedser Van Brug

Jacques Cor Johan Van Der Donck

Hugo Matthieu Visser

Hubert Adriaan Van Mierlo

Henri Gerard Cato Werij

Antonie Ellert Duisterwinkel

Antonius Gerardus Theodorus Maria Bastein

Ellart Alexander Meijer

Ellard Alexander Meijer

Gerrit-Jan Heerens

A lithographic apparatus is disclosed. The apparatus includes an illumination system configured to condition an extreme ultraviolet radiation beam, a patterning device configured to impart the extreme ultraviolet radiation beam with a pattern in its cross-section to form a patterned extreme ultraviolet radiation beam, a substrate table constructed to hold a substrate, a projection system provided with reflective optics configured to project the patterned extreme ultraviolet radiation beam onto a target portion of the substrate, a vacuum chamber constructed to create a vacuum environment, and a detection unit arranged within the vacuum chamber to detect contamination on the patterning device.

Lithographic apparatus and method

A device manufacturing method according to one embodiment of the invention includes positioning a reflective patterning structure to reflect at least a portion of a beam of radiation as a patterned beam of radiation having a pattern in its cross-section. The method also includes using a projection system to project the patterned beam of radiation to form an image on a target portion of a layer of radiation-sensitive material. Positioning includes at least one among shifting and tilting a nominal reflective surface of the reflective patterning structure with respect to a nominal object plane of the projection system according to a distortion value.

Device manufacturing method, device manufactured thereby and a mask for use in the method

A transport box for transporting a lithographic patterning device and a lithographic apparatus adapted to cooperate with the transport box are presented. The transport box is provided with a container part having an inner space with a storing position for storing the patterning device and an opening for the transfer of the patterning device. The box also includes a closure part for closing the opening, and a channel system for evacuating and/or feeding gasses from/to the inner space the box.

Lithographic apparatus and patterning device transport

According to an embodiment, a box for transporting a lithographic patterning device is arranged to cooperate with a lithographic apparatus. The transport box may be provided with a container part having an inner space with a storing position for storing the patterning device and an opening for the transfer of the patterning device. Prior to transfer of the patterning device from the inner space to the apparatus, the inner space is pressurized. The box may also comprise a closure part for closing the opening, and/or a channel system for evacuating and/or feeding gasses from/to the inner space of the box. Other embodiments include a lithographic apparatus comprising and/or configured to cooperate with such a box.

In-situ cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of molecular oxygen. Generally, the space will be purged with an ozoneless purge gas which contains a small amount of molecular oxygen in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of molecular oxygen into the space.

Lithographic projection apparatus, device manufacturing method and device manufactured thereby

A lithographic projection apparatus is disclosed. The apparatus includes a radiation system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, a projection system that projects the patterned beam onto a target portion of the substrate, a plurality of optical elements that form part of at least one of the radiation system, the patterning structure, and the projection system; and a cleaning device. The cleaning device includes at least one cleaning beam of radiation, and a gas. The cleaning device is configured to clean an individual optical element or a subset of the plurality of optical elements.

Lithographic apparatus, device manufacturing method and device manufactured thereby

Cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of an oxygen-containing species selected from water, nitrogen oxide and oxygen-containing hydrocarbons. Generally, the space will be purged with an ozone-less purge gas which contains a small amount of the oxygen-containing species in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of the oxygen-containing species into the space.

In a lithographic projection apparatus, an object such as a mask is shielded from stray particles by a particle shield using electromagnetic fields. The fields may be a uniform electric field, a non-uniform electric field or an optical breeze. The particle shield is fixed to the mask holder rather than the mask.

Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby

The invention relates to a process for providing a semiconducting device including the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined, disassociation temperature so that the gas dissociates into fractions, whereby these fractions subsequently condense on the substrate to build up a semiconducting layer.

Semiconducting devices and method of making thereof

Lithographic projection apparatus, device manufacturing method, device manufactured thereby, cleaning unit and method of cleaning contaminated objects

A process for providing a semiconducting device including the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined dissociation temperature so that the gas dissociates into fractions, whereby those fractions subsequently condense on the substrate to build up a semiconducting layer.

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Bilthoven, Netherlands

Hans Meiling