Nxp B.v.

Koninklijke Philips Corporation N.v.

Other

Stoco 10 Gmbh

Hans Marc Bert Boeve

Teunis Jan Ikkink

Haris Duric

Denis Markov

Johan Frederik Dijksman

Kim Phan Le

Jose De Jesus Pineda De Gyvez

Anke Pierik

Hans Zou

Jeff Shimizu

Michel Gerardus Pardoel

Frits Tobi De Jongh

Johannes De Wilde

Josephus Antonius Huisken

Franciscus Gerardus Maria De Jong

Judith Margreet Rensen

Ventzeslav Petrov Iordanov

Remus Albu

Haris Durc

Gavin Nicholas Phillips

A medicament delivery device, which comprises a driving mechanism and a housing () having a reservoir (), which is at least partly filled with a substance and which is sealed at least on one side with a flexible wall (). The driving mechanism is adapted to press a piston () against the flexible wall () thereby releasing the substance from the reservoir () through an opening () in the reservoir (). This provides for a safe and reliable medicament delivery device.

Medicament delivery device, capsule and in vivo medicine delivery or diagnostic system

The present invention relates to an arrangement () for heating of a magnetic material () located in the center region of an inscribed sphere within a region of action, which arrangement comprises: &#x2014;selection means () for generating a magnetic selection field () having a pattern in space of its magnetic field strength such that a first sub-zone () having a low magnetic field strength and a second sub-zone () having a higher magnetic field strength are formed in the region of action (), &#x2014;drive means () for changing the position in space of the two sub-zones () in the region of action () by means of a magnetic drive field () so that the magnetization of the magnetic material () changes locally, and &#x2014;control means () for controlling the drive means () to change the position in space of the first sub-zone () along a sequence of locations around said inscribed sphere for so long and with such a frequency that the center region of said inscribed sphere is heated.

Arrangement and method for heating of a magnetic material

The dental position tracking system includes a toothbrush () which has a system () for determining the orientation of the toothbrush in the mouth of a user relative to the earth, based on measured stored information. Information is stored in the toothbrush concerning target ranges of expected measured toothbrush orientations for each of a plurality of dental zones (). A processor () compares the measured toothbrush orientation information with the target orientation ranges, following conversion of both the target orientation information and the measured toothbrush orientation information to the same coordinate system. The processor then determines which if any of the target ranges matches, within a selected tolerance thereof, with the toothbrush orientation information. Any difference between the target range and the measured toothbrush orientation information is then used to partially adjust the target information range, in order to compensate for a change of position of the user's head.

Dental position tracking system for a toothbrush

An electronic device has an orientation sensing system for determining an orientation of the device. The system includes a magnetometer and an accelerometer. The system further has a calibration device configured to calibrate the sensing system for operational use. The accelerometer supplies measurements used to constrain a range of possible directions of the external magnetic field to be determined. The calibration device numerically solves a set of equations and is equally usable for a 2D or 3D magnetometer in combination with a 2D or 3D accelerometer.

Auto-calibration of orientation sensing systems

A method for influencing and/or detecting magnetic particles in a region of action, magnetic particles and the use of magnetic particles is disclosed, which method comprises the steps of: &#x2014;introducing magnetic particles into a region of action, &#x2014;generating a magnetic selection field having a pattern in space of its magnetic field strength such that a first sub-zone having a low magnetic field strength and a second sub-zone having a higher magnetic field strength are formed in the region of action &#x2014;changing the position in space of the two sub-zones in the region of action by means of a magnetic drive field so that the magnetization of the magnetic particles change locally, &#x2014;acquiring signals, which signals depend on the magnetization in the region of action, which magnetization is influenced by the change in the position in space of the first and second sub-zone, wherein the magnetic particles comprise a core region and a shell region, the core region comprising a magnetic material, wherein the magnetic material of the core region is provided as a mainly metallic material of comparably high saturation magnetization, wherein the shell region comprises mainly a metal oxide material or a noble metal material.

Method for influencing and/or detecting magnetic particles in a region of action, magnetic particles and the use of magnetic particles

Magnetic Particle Imaging (MPI) requires high-performing tracer materials that are highly magnetic monodispersed particles with fast remagnetization behavior. Known separation techniques only allow for fractionation of magnetic particles based on differences in magnetic volume. Proposed is a separation method, which allows for separation of magnetic particles with respect to their dynamic response onto an oscillating high gradient magnetic field.

Method and separator system for separating magnetic particles, separator column for use in a separator system

A non volatile memory device comprises memory cells such as MRAM cells, reading circuits and a reference cell for generating a reference for use by the reading circuits, and can determine if the reference is degraded by thermal instability. This can help reduce a data error rate. Detecting such degradation can prove to be more effective than trying to design in enough margins for the lifetime of the device. The reference cell can be less susceptible to degradation than other cells by using different shape of cells and different write currents. Where each reference cell is used by many memory cells, the reference cell tends to be used more often than any particular memory cell and so can be more susceptible to degradation. Another way of ensuring against longer term degradation of the reference is periodically rewriting the reference cell.

Thermally stable reference voltage generator for MRAM

Reference magnetic elements or bits with a range of magnetic volumes smaller than the minimum size used for actual data storage are written or patterned in the data storage device. The reference elements or bits have dimensions such that their magnetization will relax in a shorter time than that of the minimum expected relaxation time of the storage elements or bits. Probing of the magnetization of the reference elements or bits allows the detection of the probable onset of magnetization relaxation in the storage elements or bits therefore signaling that the re-writing (re-magnetizing) of the storage elements or bits is necessary. Such a scheme can be organized over rows, columns, or sectors.

Method and device to detect the likely onset of thermal relaxation in magnetic data storage devices

An electronic compass has a 2D magnetometer for determining two of the three components of the earth-magnetic field vector. Values for the magnitude and inclination of the field at the location of the device are given. If at least one of the body axes of the device is held horizontally in operational use, an educated guess can be made about the actual orientation of the device (e.g., heading and tilt angles) with respect to the earth. Accordingly, this compass is a very-low cost device.

Low cost electronic compass with 2D magnetometer

A magnetic field sensor circuit comprises a first magneto-resistive sensor (Rx) which senses a first magnetic field component in a first direction to supply a first sense signal (Vx). A first flipping coil (FC) applies a first flipping magnetic field with a periodically changing polarity to the first magneto-resistive sensor (Rx) to cause the first sense signal (Vx) to have alternating different levels synchronized with the first flipping magnetic field. A second magneto -resistive sensor (Ry) senses a second magnetic field component in a second direction different than the first direction to supply a second sense signal (Vy). A second flipping coil (FC) applies a second flipping magnetic field with a periodically changing polarity to the second magneto -resistive sensor (Ry) to cause the second sense signal (Vy) to have an alternating different levels synchronized with the second flipping magnetic field. The first flipping magnetic field and the second flipping magnetic field have a phase shift. A differential amplifier (AMP) receives the first sense signal (Vx) and the second sense signal (Vy) to obtain a difference signal (Vd). A first synchronous demodulator (DEM) receives the difference signal (Vd) and a first switching signal (Q) being phase locked to the alternating different levels of the first sense signal (Vx) to supply a first output signal (Vox) indicating the first magnetic field component. A second synchronous demodulator (DEM) receives the difference signal (Vd) and a second switching signal (Q) being phase locked to the alternating different levels of the second sense signal (Vy) to supply a second output signal (Voy) indicating the second magnetic field component.

Magnetic field sensor circuit

A sensor for sensing magnetic field strength has a sensor element, and detection circuitry for detecting a level of resistance of the sensor element, the level of resistance varying with magnetic field under test and having hysteresis, so that upon electromagnetic excitation the resistance can switch between two or more stable levels as the magnetic field under test varies. The sensor outputs a digital signal according to the level of resistance. The sensor output may further be interpreted in terms of a change-of-state upon electromagnetic excitation. As the sensor no longer needs a different characteristic from magnetic memory cells, it can be much easier to construct and to integrate with magnetic memory cells than an analog sensor. An excitation signal varies a threshold for the magnetic field under test at which the resistance switches, to enable multiple measurements with different thresholds. Multiple sensor elements can have different thresholds, by having differing geometry or size. It has applications in current sensing, and programmable magnetic logic, when multiple input currents are sensed. Changing the threshold can change the logic operation between AND and OR.

Digital magnetic current sensor and logic

A sensor for contactlessly detecting currents, has a sensor element having a magnetic tunnel junction (MTJ), and detection circuitry, the sensor element having a resistance which varies with the magnetic field, and the detection circuitry is arranged to detect a tunnel current flowing through the tunnel junction. The sensor element may share an MTJ stack with memory elements. Also it can provide easy integration with next generation CMOS processes, including MRAM technology, be more compact, and use less power. Solutions for increasing sensitivity of the sensor, such as providing a flux concentrator, and for generating higher magnetic fields with a same current, such as forming L-shaped conductor elements, are given. The greater sensitivity enables less post processing to be used, to save power for applications such as mobile devices. Applications include current sensors, built-in current sensors, and IDDQ and IDDT testing, even for next generation CMOS processes.

High sensitivity magnetic built-in current sensor

Magnetic or magnetoresistive random access memories (MRAMs) are implemented in a variety of arrangements and methods. Using one such arrangement, a matrix is implemented with magnetoresistive memory cells logically organized in rows and columns, each memory cell including a magnetoresistive element. The matrix has a set of column lines, a column line being a continuous conductive strip which is magnetically coupled to the magnetoresistive element of each of the memory cells of a column, wherein each column line has a forward column line and a return column line arranged on opposite sides of the magnetoresistive element and offset from one another for forming a return path for current in that column line.

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Hechtel-Eksel, Belgium

Hans Marc Bert Boeve