Neocera, Inc.

Ut-battelle, Inc.

Hans M Christen

Vladimir Vladimirovich Talanov

Robert L Moreland

Andrew R Schwartz

Sergei V Kalinin

Ho Nyung Lee

Arthur P Baddorf

Vincent Meunier

Sherwood D Silliman

A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

Ferroelectric tunneling element and memory applications which utilize the tunneling element

A probe for non-destructive determination of complex permittivity of a material and for near field optical microscopy is based on a balanced multi-conductor transmission line structure created on a dielectric substrate member which confines the probing field within a sharply defined sampling volume in the material under study. A method for manufacturing dielectric support member based probes includes anisotropically depositing a 50-100 &#x212b; thick underlayer of Cr, Ni, W or Ta onto the dielectric support member, anisotropically depositing conductive material onto the Cr, Ni, W or Ta underlayer, and removing the unwanted conductive material at the sides of the dielectric support member to electrically isolate the created conductive strips.

Apertured probes for localized measurements of a material's complex permittivity and fabrication method

A method for measuring a material's complex permittivity is provided where a near-field microwave probe is positioned a predetermined distance from a first and a second standard sample for measuring a relative resonant frequency shift of the near-field microwave probe for standard samples. Based on measurements, calibration coefficients are calculated. A relative resonant frequency shift of the near-field microwave probe for a sample under study is measured by fast frequency sweep technique while the distance between the tip of the probe and the sample under the study is maintained nominally at the distance between the tip of the probe and each standard sample during a calibration procedure by a shear-force based distance control mechanism. Also, the change in the quality factor of the probe for unloaded and loaded resonator is measured. The dielectric constant of the sample under study is calculated using the resonant frequency shift and the change in the quality factor of the near-field microwave probe for the sample under study and the calibration coefficients obtained during the calibration procedure.

System and method for quantitative measurements of a material's complex permittivity with use of near-field microwave probes

A probe for non-destructive determination of complex permittivity of a material and for near field optical microscopy is based on a balanced multi-conductor transmission line structure created on a dielectric substrate member which confines the probing field within a sharply defined sampling volume in the material under study.

An apparatus for localized measurements of complex permittivity of a material is provided. A probe ( ) analyzes the complex permittivity of a sample ( ), the probe ( ) having a balanced two conductor transmission line ( ) formed of conductive segments ( and ). A probing end ( ) of the transmission line ( ) is brought within close proximity of sample ( ) and an opposite end ( ) of the transmission line is connected to a terminating plate ( ) to form a resonator structure ( ) for measurement of the complex permittivity of sample ( ).

Apparatus for localized measurements of complex permittivity of a material

There is provided a deposition system ( ) for yielding substantially uniform deposition of an evaporant material onto a substrate. The deposition system ( ) comprises: a source ( ) for generating a coherent energy beam; a substantially planar target ( ) containing the evaporant material and disposed in spaced relation to the substrate; a focusing element ( ) optically coupled to the source for focusing the coherent energy beam onto the target ( ); and, an actuator ( ) coupled to the focusing element ( ) for reversibly translating the focusing element ( ) along a scanning path directed substantially parallel to a target plane defined by the target ( ). The focused coherent energy beam defines an impingement spot ( ) on the target ( ). The impingement spot ( ) is displaced responsive to the translation of the focusing element ( ) along the scanning path. The focus of the coherent energy beam on the target ( ) thus remains substantially preserved.

Scanned focus deposition system

A combinatorial synthesis system is provided which combines pulsed laser deposition techniques with the continuous composition spread technique in which a plurality of targets made of different ingredient materials are arranged in a predetermined relationship and are ablated by an energetic beam focused on the surface of a particular target. By maintaining the energetic beam in a stationary state, the target carousel is rotated so as to bring a particular target in engagement with the energetic beam. The targets are brought into engagement with the energetic beam in a predetermined sequence so that different materials are deposited onto the substrate in a predetermined sequence. Distributed deposition areas surround each deposition center and overlap each with the other to form a continuous compositional spread on the surface of the substrate.

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Knoxville, TN, United States of America

Hans M Christen