Ims-ionen Mikrofabrikations Systeme Gmbh

Ims Ionen Mikrofabrikations Systeme Gesellschaft M.b.h.

Ims Ionen Mikrofabrikations Systeme Gesellschaft

Universitat Gesamthochschule Kassel

Oesterreichische Investitionskredit Aktiengesellschaft

Ims Nanofabrication Gmbh

Ims Ionen Mikrofabrikations Systems Gesellschaft M.b.h.

Ims-ionen Mikrofabrikations Systems Gmbh

Ustav Pocitacovych Systemov, Slovenska Adademia Vled

Osterreichische Investitionskredit Aktiengesellschaft

Ims Ionen Mikrofabrikations Systeme Gellschaft M.b.h.

Rudolf Sacher Gesellschaft M.b.h.

Ionen Mikrofabrikations Systeme Gesellschaft Mbh

Ims-innenmikrofabrikations Systeme Gmbh

Hans Loschner

Gerhard Stengl

Alfred Chalupka

Ivaylo W Rangelow

Elmar Platzgummer

Herbert Vonach

Hilton F Glavish

Robert Nowak

Peter Wolf

Uwe B Sleytr

Feng Shi

Ernst Hammel

Peter Hudek

Pavol Hrkut

Stefan Eder

Ernst Hammell

Dietmar Pum

Gerhard Stengel

A charged-particle multi-beam exposure apparatus () for exposure of a target () uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (). For each particle beam an illumination system (), a pattern definition means () and a projection optics system () are provided. The illuminating system () and/or the projection optics system () comprise particle-optical lenses having lens elements (L, L, L, L, L) common to more than one particle beam. The pattern definition means () defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

Charged-particle multi-beam exposure apparatus

In a particle multibeam lithography apparatus an illumination system () having a particle source () produces an illuminating beam () of electrically charged particles, and a multibeam optical system () positioned after the illumination system () and comprising at least one aperture plate having an array of a plurality of apertures to form a plurality of sub-beams focuses the sub-beams onto the surface of a substrate (), wherein for each sub-beam () a deflection unit () is positioned within the multibeam optical system and adapted to correct individual imaging aberrations of the respective sub-beam with respect to the desired target position and/or position the sub-beam during a writing process an the substrate surface. Preferably, for each sub-beam the respective aperture of the first aperture plate defines the size and shape of the sub-beam cross-section and the multibeam optical system produces a demagnified image of the aperture on the substrate surface, with a demagnification of at least 20:1.

Particle multibeam lithography

In a particle projection lithography system, an alignment system is used to determine alignment parameters to measure the position and shape of an optical image of a pattern of structures formed in a mask and imaged onto a target by means of a broad particle beam, by means of an apparatus with a plurality of alignment marks adapted to produce secondary radiation upon irradiation with radiation of said particle beam. In order to allow for a variation of the alignment parameters along the optical axis, the alignment marks are positioned outside the aperture of the alignment system for the part of the beam that generates said optical image, arranged at positions to coincide with particle reference beams projected through reference beam forming structures provided on the mask while said optical image is projected onto the target, and situated on at least two different levels over the target as seen along the directions of the respective reference beams.

Pattern lock system

The invention relates to a method for producing a structured layer of defined functional molecules on the surface of a flat substrate, on the surface of which structures having different surface properties, at least as regards their hydrophobicity, are produced. A monolayer of a protein-containing crystalline cell surface layer (S layer) is deposited by recrystallization on said structured surface. Said S Layer binds only to those structured areas of the surface characterized by raised hydrophobicity. Alternatively, a structured S-layer may also be produced on the basis of a monolayer of an S layer deposited on a substrate by irradiating predefined sections of said layer to be structured with radiation of a predetermined intensity and energy. In the irradiated sections of the S-layer this suppresses the binding or intercalating ability of at least one surface. Functional molecules can bind to or become intercalated in the surface or the intermediate spaces of the crystal lattice, for example for use as bio-sensors.

Method of producing a structured layer

Method for the purpose of producing a stencil mask

In order to process a carbon film carbon is deposited on a substrate by sputtering from a carbon sputter target in a gas mixture which contains nitrogen in a minimum proportion of 20% and a sputter gas at a predetermined gas pressure and the substrate is then subjected under a high vacuum to thermal treatment at a temperature above 100.degree. C. The carbon films produced in this manner comprise a fiber and/or tube structure which extends substantially perpendicular to the film.

Process for producing a carbon film on a substrate

Process for producing a structured mask

A silicon membrane for use as a micromechanical sensor or as a mask for projection lithography is fabricated by doping a silicon wafer to different thicknesses at different portions and then electrochemically etching away the undoped portion of the wafer.

Silicon membrane and method of making same

In an ion projection lithography system, apparatus and methods for positioning on a substrate or wafer at a target station an image of structures provided on a mask, wherein the mask includes reference marks to provide ion reference beams about the image field, the target station includes marks and the beam of the system is controlled to establish a coincidence of the marks on the mask with the corresponding marks at the target station. The ion projection system shown includes in this optical path an electrostatic multipole, means for rotational adjustment of the image relative to the substrate, and means for correcting the scale of the image. Embodiments are shown in which the marks at the target station are carried on the wafer or on a reference block which is positionally related to the wafer, e.g., by an interferometer. In the case of the reference block, it has an aperture corresponding in size to the mask image to be formed on the substrate so that the marks are disposed outside the optical path used to generate the image on the substrate. Detectors provided for secondary radiation emitted by the marks at the target station as a result of the ion reference beams passing through the marks on the mask produce signals that control the multipole, the means for relative rotational adjustment of the image on the substrate and the means for scale correction. Special masks are provided that enable the reference beams to reach their respective marks at the target station during blanking and unblanking of the mask, permitting operation of the alignment system at both times. The reference beams are shielded from the image beam and are scanned repeatedly over their respective marks at the target station.

Method and apparatus for image alignment in ion lithography

The invention concerns an ion beam apparatus, by means of which defects in a substrate can be recognized, and repaired under continuous control. For this purpose, the ion beam apparatus, in its beams path, after the ion source, is equipped with a mask exhibiting a preferrably circular hole and between ion source and mask with a controllable lens for the purpose of modification of the divergence angle under which the beam strikes the mask. The aperture of the mask is imaged upon the substrate. In this way the intensity of the ion beam may be varied for use in inspecting a substrate for defects and subsequently removing the detected defects.

Ion beam apparatus and method of modifying substrate

A system for stabilizing an irradiated mask for use in lithographic set-ups, the mask including formations which are permeable to electromagnetic or corpuscular radiations, especially ion beams, the system having one or more cooling surfaces that surround the beam axis, are disposed in the field of view of the mask, and are located between the mask and the radiation source and/or behind the mask. The cooling surfaces preferably are in the form of surfaces of revolutions, are comprised of metal, have grooves that produce multiple reflections of the thermal radiation and are spaced equal distances apart from the axis of the optical path. The distances from the cooling surfaces to the axis of the optical path preferably exceed the distance from the edge of the mask sheet to the axis of the optical path. The mask is disposed in a chamber which is maintained by automatic control at a constant temperature, particularly at room temperature, e.g. by heating of the walls. The mask sheet is movable in the chamber to extend in front of an opening that is formed in a chamber wall and disposed in the optical path; the opening optionally being formed in a shutter which constitutes a part of the chamber wall, and the cooling surfaces are disposed in the field of view of the mask when the latter is disposed in front of the opening in the optical path, so that the heating action of the beam of radiation on the mask can be compensated by the cooling surfaces and the mask will be maintained approximately at the chamber temperature also during an irradiation.

Arrangement for stabilizing an irradiated mask

The mask of our invention can be used in image forming units, for example in ion projection microlithography. The mask comprises a mask foil clamped into a retaining frame. The mask foil has a larger thermal expansion coefficient than the retaining frame. To make this mask the mask foil and retaining frame are heatead to a higher temperature than room temperature and clamped in position at this temperature.

Particle or radiation beam mask and process for making same

A multipole corrective element with the individual poles being electromagnetically energized individually and selectively to create a variable field around a charged particle beam projected through a mask and a lens system onto a substrate, e.g. an ion-beam or electron-beam microlithography. The corrective element is provided independently of the ion-optical lens system between the latter and the mask, preferably proximal to the mask.

Ion-projection apparatus and method of operating same

An ion-projecting apparatus which has between the ion source and the mask, directly proximal to the mask, at least one ion optical correction element in the form of a multipole with at least eight poles and so located that there is no other deflection means between the octapole and the mask.

Ion-projection apparatus

An apparatus and method for the fine alignment of a mask with a substrate in ion-projection lithography, e.g. for the production of integrated circuit chips, utilizes a multipole, an axial magnetic field generator and a scale controlling projection lens in the path of the beam. The mask is provided with markings which are imaged on the substrate and brought into registry with corresponding markings thereon utilizing pairs of detectors associated with each linear marking and responsive to secondary emission of the ion-beam marking projected on the substrate. All of the markings are straight lines.

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Vienna, Austria

Hans Loschner