Ims-ionen Mikrofabrikations Systeme Gmbh

Ims Nanofabrication Ag

Ims Nanofabrication Gmbh

Ims Mikrofabrikations Systeme Gmbh

Ims-ionen Mikrofabrikations Systems Bmgh

Hans Loeschner

Gerhard Stengl

Alfred Chalupka

Elmar Platzgummer

Herbert Vonach

Herbert Buschbeck

Gertraud Lammer

Robert Nowak

Till Windischbauer

A multi-beam pattern definition device () for use in a particle-beam processing or inspection apparatus is configured to be irradiated with a beam (lp,bp) of electrically charged particles so as to form a number of beamlets to be imaged to a target. An aperture array means () comprises at least two sets of apertures () for defining respective beamlets (b-b), wherein the sets of apertures comprise a plurality of apertures arranged in interlacing arrangements and the apertures of different sets are offset to each other by a common displacement vector (d). An opening array means () has a plurality of openings () configured for the passage of a subset of beamlets corresponding to one of the sets of apertures but lacking openings (being opaque to the beam) at locations corresponding to the other sets of apertures. A positioning means shifts the aperture array means relative to the opening array means in order to selectively bring one of the sets of apertures into alignment with the openings in the opening array means.

Pattern definition device with multiple multibeam array

A particle-beam exposure apparatus () for irradiating a target () by means of a beam () of energetic electrically charged particles comprises: an illumination system () for generating and forming said particles into a directed beam (); a pattern definition means () located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam () emerging from the pattern definition means through the apertures; and a projection system () positioned after the pattern definition means () for projecting the patterned beam () onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/deceleration means () containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

Ion irradiation of a target at very high and very low kinetic ion energies

A device ( ) for defining a pattern, for use in a particle-beam exposure apparatus ( ), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means ( ) and a blanking means ( ). The aperture array means ( ) has a plurality of apertures ( ) of identical shape defining the shape of beamlets (bm). The blanking means ( ) serves to switch off the passage of selected beamlets; it has a plurality of openings ( ), each corresponding to a respective aperture ( ) of the aperture array means ( ) and being provided with a deflection means ( ) controllable to deflect particles radiated through the opening off their path (p ) to an absorbing surface within said exposure apparatus ( ). The apertures ( ) are arranged on the blanking and aperture array means ( ) within a pattern definition field (pf) being composed of a plurality of staggered lines (p ) of apertures. Each of the lines (p ) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means ( ) as seen in the direction of the particle beam, a cover means ( ) is provided having a plurality of openings ( ), each corresponding to a respective opening ( ) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings ( ) of the blanking array means.

Maskless particle-beam system for exposing a pattern on a substrate

In a particle-optical imaging lithography system, an illuminating system comprising a particle source and a first electrostatic lens arrangement produces a particle beam which penetrates a mask foil provided with an orifice structure positioned in the particle beam path. This structure is imaged on a substrate plane by a projection system comprising a second electrostatic lens arrangement. The first and second lens arrangements each comprise, on their respective sides facing the mask holding device, at least one pre- and post-mask electrode, respectively. By applying different electrostatic potentials to the pre- and post-mask electrodes and to the mask foil, the mask foil and the pre-mask electrode form a grid lens with negative refracting power, and the mask foil and the post-mask electrode also form a grid lens with negative refracting power.

Particle-optical imaging system for lithography purposes

An arrangement for shadow-casting lithography by focusing electrically charged particles for the purpose of imaging structures of a mask on a substrate disposed immediately to the rear thereof, comprising a particle source (2) and an extraction system (3) which produces a divergent particle beam issuing from a substantially point-shaped virtual source, and comprising a lens (6) for focusing the divergent particle beam which comprises an electrode arrangement (6a, 6b, 6c, 6d, 6e, 6f, 6g, 6h) which includes at least one electrostatic collector lens (6a to 6f in conjunction with an electrostatic diverging lens (6g, 6h) in order to be able to compensate lens errors of the collector lens in a purposeful manner with respect to lens errors of the diverging lens and to render possible a predeterminable change in the imaging scale. The diverging lens is preferably disposed in the beam direction at a distance to the rear of the collector lens in immediate proximity of the mask in order to be able to use the mask as a grating for the diverging lens.

Arrangement for shadow-casting lithography

An arrangement for masked beam lithography by means of electrically charged particles for the imaging of structures of a mask on a substrate arranged behind it, with a substantially punctiform particle source (Q) and an extraction system (Ex) for a specific type of charged particles which leave the source (Q) in the form of a divergent particle beam, and with an electrode arrangement (B, B', El.sub.1, El.sub.2, E.sub.3, . . . El.sub.n) for concentrating the divergent particle beam into a particle beam which is at least approximately parallel, by means of which an electrostatic acceleration field (E) is generated, the potential (U) of which in the beam direction has a constant gradient at least in parts and perpendicular to the beam direction is substantially constant at least within the beam cross-section. The electrode arrangement can be formed for example by a plurality of coaxial ring electrodes (El.sub.1, El.sub.2, El.sub.3, . . . El.sub.n) which are disposed at intervals behind one another in the beam direction, by a coaxial hollow cylinder which is aligned in the beam direction or a grating with a predetermined constant electrical resistance per unit of length, or by a plurality of longitudinal bars which are aligned in the beam direction, disposed parallel on surface of an imaginary coaxial cylinder with a predetermined constant electrical resistance per unit of length.

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Vienna, Austria

Hans Loeschner