Novaled Gmbh

Technische Universitát Dresden

Technische Universitaet Dresden

Flexora Gmbh

Novaled Ag

Hans Kleemann

Karl Leo

Bjoern Luessem

Gregor Schwartz

Alexander Zakhidov

Alrun Guenther

Jan Blochwitz-Nimoth

Rudolf Lessmann

Jörn Vahland

Daniel Kasemann

Björn Lüssem

Matteo Cucchi

Veronika Scholz

Alexander Lee

Hsin Tseng

Seongae Park

Alrun Günther

An organic thin film transistor (OTFT), in particular thin-film field-effect transistor (OFET), that includes a substrate, a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer. The source electrode, the drain electrode, and the gate electrode are arranged in a coplanar layer structure. The organic thin-film transistor has an intermediate layer for the capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode.

Organic thin film transistor and method for producing same

Described herein is an electronic component that may include a substrate, wherein the substrate may include at least two electrodes, wherein the at least two electrodes are each spaced apart from each other on and/or within the substrate. When the electronic component is in a first operating state, an electrolytic material may be disposed at least in a spatial region between the at least two electrodes, wherein the electrolytic material comprises at least one polymerizable material. When the electronic device is in a second operating state, at least one electrical connection may be made between the at least two electrodes, wherein the at least one electrical connection comprises an electrically conductive polymer. The electrically conductive polymer may comprise one or more fiber structures, wherein the one or more fiber structures are in physical contact with the at least two electrodes.

Electronic component and method of operating an electronic component

The invention refers to a method for producing an organic transistor, the method comprising steps of providing a first electrode () on a substrate (), generating a source-drain insulator () assigned at least partially to the substrate () and/or at least partially to the first electrode (), generating a second electrode () assigned to the source-drain insulator (), depositing an organic semiconducting layer () on the first electrode (), the second electrode (), and the source-drain insulator (), generating a gate insulator () assigned to the organic semiconducting layer (), and providing a gate electrode () assigned to the gate insulator (). Further, the invention relates to an organic transistor.

Method for producing an organic transistor and organic transistor

The invention relates to a method for producing a vertical organic field-effect transistor, in which a vertical organic field-effect transistor with a layer arrangement is produced on a substrate, said layer arrangement including transistor electrodes, namely a first electrode (), a second electrode () and a third electrode (), electrically insulating layers () and an organic semiconductor layer (). In addition, a vertical organic field-effect transistor is provided, which includes a layer arrangement with transistor electrodes on a substrate ().

Method for producing a vertical organic field-effect transistor, and vertical organic field-effect transistor

Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

Method for producing an organic field effect transistor and an organic field effect transistor

The disclosure relates to a method for producing an organic field effect transistor, including providing a gate electrode and a gate insulator, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode. Furthermore, an organic field effect transistor is provided.

Organic electronic devices and methods for making organic electronic devices are provided. The organic electronic devices may include a gate electrode, a gate insulator, an organic semiconducting layer, a contact improving layer, a source electrode, and a drain electrode. The source electrode and the drain electrode may be arranged on the contact improving layer, and the contact improving layer may include an organic dopant material which is soluble in Hydrofluorether.

Method for manufacturing an organic electronic device and organic electronic device

The invention relates to an array of several semiconductor components (), comprising a layer array () having a first and a second semiconductor component (), each being formed in an electrode layer () having a drain and a source electrode (), a gate electrode () in a further electrode layer, and a layer stack between the electrode layer () and the further electrode layer (). The invention further relates to a method for producing an array having a first and a second semiconductor component () in a layer array () and to the application thereof.

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Dresden, Germany

Hans Kleemann