Seagate Technology Incorporated

Hans Jürgen Richter

Samuel Dacke Harkness, Iv

Erol Girt

Mariana Rodica Munteanu

Thomas P Nolan

Qingzhi Peng

An apparatus may include a first magnetic layer, a first exchange break layer formed on the first magnetic layer, a second magnetic layer formed on the first exchange break layer, a second exchange break layer formed on the second magnetic layer, and a third magnetic layer formed on the second exchange break layer. The first magnetic layer has a first magnetic anisotropy energy, H, the second magnetic layer has a second magnetic anisotropy energy, H, and the third magnetic layer has a third magnetic anisotropy energy, H. In some embodiments, H&#x2212;His less than H&#x2212;H. In some embodiments, the apparatus may be a perpendicular magnetic recording medium.

Apparatus including a perpendicular magnetic recording layer having a convex magnetic anisotropy profile

A photovoltaic apparatus includes an absorber including a first quantum dot layer having a first plurality of quantum dots of a first quantum dot material in a first matrix material, and an up-converter layer positioned adjacent to the absorber layer, the up-converter layer including a second quantum dot layer having a second plurality of quantum dots of a second quantum dot material and a second matrix material.

Photovoltaic device with an up-converting quantum dot layer and absorber

A photovoltaic apparatus includes an absorber including a p-layer having a bandgap greater than about 2 eV, an n-layer having a bandgap greater than about 2 eV, and an amorphous SiGe intrinsic layer between the p-layer and the n-layer; a first electrode adjacent to a first side of the absorber; a second electrode adjacent to a second side of the absorber; and an up-converter layer positioned adjacent to the second electrode on an opposite side of the second electrode from the absorber, wherein the up-converter layer includes a plurality of quantum dots of a first material in a matrix of a second material.

Hybrid photovoltaic cell using amorphous silicon germanium absorbers with wide bandgap dopant layers and an up-converter

An apparatus includes a first seedlayer including a hexagonal close-packed alloy with a sigma phase addition, and an active layer including a plurality of quantum dots on the first seedlayer. The apparatus can further include a substrate, an adhesion layer on the substrate, and a wetting layer on the adhesion layer, wherein the first seedlayer is on the wetting layer.

Thin film template for fabrication of two-dimensional quantum dot structures

An anti-ferromagnetically coupled ('AFC') magnetic recording medium with RKKY coupling between spaced-apart magnetic layers comprising a non-magnetic substrate having a surface, and a layer stack atop the substrate surface. The layer stack comprises, in overlying sequence from the substrate surface: a magnetic stabilization layer, a non-magnetic spacer layer, and a main magnetic recording layer the main magnetic recording layer comprises, in overlying sequence from the non-magnetic spacer layer: (i) a top interface layer, (ii) a Cr alloy magnetic layer, and (iii) a top magnetic layer.

Anti-ferromagnetically coupled recording media with enhanced RKKY coupling

A high areal recording density longitudinal magnetic recording medium having improved thermal stability and signal-to-medium noise ratio ('SMNR'), comprises:

Hybrid anti-ferromagnetically coupled and laminated magnetic media

A method of measuring the magnetic moment (Mt) and anisotropy field strength (H) of a perpendicular magnetic recording medium comprising a planar-surfaced perpendicular recording layer and a magnetically soft underlayer (SUL) is provided. A compensated magnetic moment (Mt)of the recording layer is determined for a given strength (H) of a generally in-plane magnetic field applied generally to the recording layer. The compensated magnetic moment (Mt)of the recording layer is determined for a plurality of different in-plane applied magnetic field (H) strengths to determine the variation of the compensated magnetic moment (Mt)of the recording layer as a function of the strength (H) of the generally in-plane applied magnetic fields. The remanent magnetic moment (Mt(0)) at zero (0) field strength (H) and the anisotropy field strength (H) is determined from the measured variation of the compensated magnetic moment (Mt)of the recording layer as a function of the strength (H) of the generally in-plane applied magnetic fields.

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Palo Alto, CA, United States of America

Hans Jürgen Richter