Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Ams-Osram International Gmbh

Hans-Jürgen Lugauer

Alfred Lell

Thomas Schwarz

Hubert Halbritter

Berthold Hahn

Volker Härle

Stefan Bader

Manfred Mundbrod-Vangerow

Dominik Eisert

Tansen Varghese

Stefan Illek

Matthias Sabathil

Uwe Strauss

Jürgen Moosburger

Ulrich Zehnder

Johannes Völkl

Ulrich Jacob

Helmut Bolay

Patrick Rode

Alexander Linkov

Martin Strassburg

Michael Fehrer

Andreas Plöβl

Andreas Weimer

Alexander F Pfeuffer

Karl Engl

Reiner Windisch

Tobias Meyer

Matthias Peter

Lutz Hoeppel

Andreas Biebersdorf

Klaus Streubel

Adrian Stefan Avramescu

Andreas Weimar

Tetsuya Taki

Alexander Walter

Bruno Jentzsch

Nikolaus Gmeinwieser

Alexander Behres

Volker Haerle

Andreas Waag

Vincent Grolier

Stephan Miller

Mohammad Tollabi Mazraehno

Martin Straßburg

Sönke Fündling

Frederik Steib

Jana Hartmann

Mariel Grace Jama

Volker HÄRLE

Richard Flöter

A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device. Furthermore, a method for producing such a phase-coupled laser device is provided.

Phase-coupled laser assembly and method for producing a phase-coupled laser assembly

In an embodiment, an optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element, and a second contact region configured to electrically contact the second semiconductor layer, wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer, wherein the second contact region is arranged between patterned regions of the first semiconductor layer, wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and wherein a concentration of the first and second composition elements varies from a position on a side of the second semiconductor layer to a position on a side of the second metallic contact layer.

Optoelectronic semiconductor component having a semiconductor contact layer and method for producing the optoelectronic semiconductor component

An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

Optoelectronic semiconductor chip and method of manufacturing the same

A method of producing an optoelectronic component includes providing a carrier having a carrier surface, a first lateral section of the carrier surface being raised relative to a second lateral section of the carrier surface; arranging an optoelectronic semiconductor chip having a first surface and a second surface on the carrier surface, wherein the first surface faces toward the carrier surface; and forming a molded body having an upper side facing toward the carrier surface and a lower side opposite the upper side, the semiconductor chip being at least partially embedded in the molded body.

Method of producing optoelectronic components having complex shapes

The invention relates to a light-emitting semiconductor component, comprising&#x2014;a first semiconductor body (), which comprises an active zone () in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body () through a radiation exit surface (), and&#x2014;a second semiconductor body (), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein&#x2014;the first semiconductor body () and the second semiconductor body () are produced separately from each other,&#x2014;the second semiconductor body () is electrically inactive, and&#x2014;the second semiconductor body () is in direct contact with the radiation exit surface () and is attached there to the first semiconductor body () without connecting means.

Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies

The present application relates to a method of producing an optoelectronic component. An optoelectronic is produced by this method. An optoelectronic semiconductor chip has a first surface. A sacrificial layer is deposited on the first surface. The optoelectronic semiconductor chip is at least partially embedded in a mold body and the sacrificial layer is removed.

Optoelectronic component and method for producing same

A method can be used for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed.

Method for producing an optoelectronic component

The invention relates to a light-emitting semiconductor component, comprising&#x2014;a first semiconductor body (), which comprises an active zone () in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body () through a radiation exit surface (), and&#x2014;a second semiconductor body (), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein&#x2014;the first semiconductor body () and the second semiconductor body () are produced separately from each other, &#x2014;the second semiconductor body () is electrically inactive, and&#x2014;the second semiconductor body () is in direct contact with the radiation exit surface () and is attached there to the first semiconductor body () without connecting means.

An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one doped functional layer having at least one dopant and at least one codopant, wherein the semiconductor layer sequence includes a semiconductor material having a lattice structure, one selected from the dopant and the codopant is an electron acceptor and the other an electron donor, the codopant is bonded to the semiconductor material and/or arranged at interstitial sites, and the codopant at least partly forms no bonding complexes with the dopant.

Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa1-xN-based intermediate layer where 0&#x3c;x&#x2266;1, which is situated at a same side of the active zone as the n-doped layer sequence.

Optoelectronic semiconductor chip and use of an intermediate layer based on AlGaN

A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.

Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same

A method of producing a radiation-emitting thin film component includes providing a substrate, growing nanorods on the substrate, growing a semiconductor layer sequence with at least one active layer epitaxially on the nanorods, applying a carrier to the semiconductor layer sequence, and detaching the semiconductor layer sequence and the carrier from the substrate by at least partial destruction of the nanorods.

Method of producing a radiation-emitting thin film component and radiation-emitting thin film component

A light-emitting diode chip () comprises a GaN-based, radiation-emitting epitaxial layer sequence (), an active region (), an n-doped layer () and a p-doped layer (). The p-doped layer () is provided, on its main surface () facing away from the active region (), with a reflective contact metallization () comprising a radioparent contact layer () and a reflective layer (). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.

Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same

This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (). The semiconductor body has a first principal surface () and a second principal surface (), with the radiation produced being emitted through the first principal surface () and with a reflector () being produced on the second principal surface (). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer () is first applied to a substrate (), and a plurality of GaN layers () that constitute the semiconductor body of the component are then applied to this. The substrate () and the interlayer () are then detached and a reflector () is produced on a principal surface of the semiconductor body.

Radiation-emitting semiconductor element and method for producing the same

A radiation-emitting semiconductor component has a high p-type conductivity. The semiconductor body of the component includes a substrate, preferably an SiC-based substrate, on which a plurality of GaN-based layers have been formed. The active region of these layers is arranged between at least one n-conducting layer and a p-conducting layer. The p-conducting layer is grown in tensile-stressed form. The p-doping that is used is preferably Mg.

Radiation-emitting semiconductor component based on gallium nitride, and method for fabricating the semiconductor component

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Sinzing, Germany

Hans-Jürgen Lugauer