Basf Aktiengesellschaft

Michigan State University

Keil, Thompson & Shurtleff

Basf Se Corporation

Hans-Josef Sterzel

Axel Sanner

Herbert Naarmann

Michael Portugall

Franz Brandstetter

Bernhard Rosenau

Wolfgang Seydl

Bernd-Steffen Von Bernstorff

Peter Neumann

Graham E McKee

Otto Watzenberger

Josef Guth

Karl-Heinz Etzbach

Mercouri G Kanatzidis

Erhard Seiler

Willi Kreuder

Klaus Penzien

Klaus Halbritter

Michael Hesse

Klaus Hahn

Hartmut Hibst

Rolf Wurmb

Claus Cordes

Klaus Kühling

Alfred Pirker

Johan H Ter Maat

Burkhard Straube

Ulrich Endemann

Werner Hesse

Hans Pirzer

Gerd Blinne

Graham Edmund Mc Kee

Holger Friedrich

Horst Reimann

Helmut Ringsdorf

Volker Koch

Karl Schlichting

Christian Tragut

Kirsten Burkart

Ralf Noerenberg

Hendrik Schönfelder

Marion Meyer

Duck-Young Chung

Gabriele Unger

Kasimir Von Dziembowski

Eva Freudenthaler

Knut Oppenlaender

Gerd Kaibel

Hermann Gausepohl

Peter Horn

Peter Zehner

Bernhard Albert

Stephan Bauer

Bernd Leutner

Frank Braun

Franz Schmidt

Adolf Parg

Markus Weber

Kerstin Schierle-Arndt

Bernd Bronstert

Karl-Heinrich Schneider

Bernd Hisgen

Klaus Boehlke

Detlef Kratz

Rainer Theysohn

Matthias Eiermann

Hilmar Ohlig

Martin Welz

Herbert Vogel

Hans Wohlfromm

Herbert Exner

Hans G Matthies

Knut Bittler

Herbert Scholz

Hans-Ulrich Schlimper

Helmut M&ouml;hwald

Thomas Danner

Eckhard Str&ouml;fer

Andreas Kleinke

Dieter Schl&auml;fer

Armin Alteheld

Thomas Letzelter

Gunther Mair

Michael Stang

Hans-Friedrich Schmidt

Alexandra Brand

Christof Möck

Frank Haass

Fritz Nimtz

Johan Ebenhoech

J&uuml;rgen Schweinzer

Joern Tidow

Rolf Foerster

Brudermuller

Peter Foerster

Sybille Von Tomkewitsch

Heinz-Dieter Vondenhagen

Klaus Kuehling

Elke Hoffmann

Klaus K&uuml;hling

The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I)(PbTe)(SnSbTe)&#x2003;&#x2003;(I)with 0.0001&#x2266;x&#x2266;0.5, 0&#x2266;y&#x3c;2 and 0&#x2266;z&#x3c;2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|&#x2267;60 &#x3bc;V/K at a temperature of 25&#xb0; C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 &#x3bc;W/(cm&#xb7;K), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.

Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements

The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a p- or n-doped semiconductor material comprising a binary compound of the formula (I) or a ternary compound of the formula (II):ZnTe&#x2003;&#x2003;(I)ZnMnTe&#x2003;&#x2003;(II)where x is from 0.01 to 0.99,and a particular proportion of tellurium ions in the photovoltaically active semiconductor material has been replaced by halogen ions and nitrogen ions and the halogen ions are selected from the group consisting of fluoride, chloride and bromide and mixtures thereof.

Photovoltaic cell comprising a photovoltaically active semiconductor material comprising a particular portion of tellurium ions replaced with halogen and nitrogen ions

Process for preparing nanocrystalline lithium titanate spinels by reacting lithium hydroxide and a titanium alkoxide at elevated temperature in a reaction mixture which forms water of reaction.

Preparation of nanocrystalline lithium titanate spinels

Iron pentacarbonyl is prepared by reacting iron with carbon monoxide in suspension and in the presence of a mixture of alkali metal sulfide and sulfur as a catalyst.

Preparation of iron pentacarbonyl

A thermoelectrically active p- or n-conductive semiconductor material is constituted by a ternary compound of the general formula (I)(PbGe)Te&#x2003;&#x2003;(I)with x value from 0.16 to 0.5,wherein 0 to 10% by weight of the ternary compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least &#xb1;200 &#x3bc;V/K at a temperature of 25&#xb0; C.

Pb-Ge-Te-compounds for thermoelectric generators or Peltier arrangements

The rod-shaped apatite crystals of the formula Ca(PO)(OH)Fhave the following features The invention furthermore describes dispersions which contain such rod-shaped apatite crystals, and a process for the preparation of the dispersions or of the apatite crystals.

Rod-shaped apatite crystals having a specific length-to-width ratio

Iron pentacarbonyl is prepared by reacting iron with carbon monoxide in suspension and in the presence of a polysulfide of the general formula RSR' as a catalyst, where R is an organic radical and x is a number from 2 to 8.

Process for preparing barium titanate or strontium titanate by reacting titanium alkoxides with barium hydroxide hydrate or strontium hydroxide hydrate in a C&#x2013;C-alcohol or a glycol ether at from 50 to 150&#xb0; C.

Preparation of barium titanate or strontium titanate having a mean diameter of less than 10 nanometers

Process for preparing mixed oxides by reacting alkoxides of the elements titanium, zirconium, niobium, tantalum or mixtures thereof with metal hydroxides, metal carboxylates, metal hydroxycarbonates, metal carbonates or mixtures thereof of the elements lithium, sodium, potassium, magnesium, calcium, strontium, barium, zinc, cadmium, aluminum, gallium, yttrium, lanthanum, praseodymium, neodymium, samarium, dysprosium, europium, lead, bismuth or mixtures thereof in a C&#x2013;C-alkanol, in a glycol ether or in a mixture thereof at from 50 to 200&#xb0; C.

Preparation of mixed oxides having mean diameters of less than 10 nanometers

Rod shaped apatite crystals having a specific length-to-width ratio

The invention relates to a method for vulcanizing caoutchouc or latex by adding a mixture M which contains a component a) from a1) 20 to 96% by weight of sulfur, a2) 4 to 80% by weight of a complexing agent, and optionally other additives b) to caoutchouc or latex and then vulcanizing the mixture. The inventive method is characterized in that the average particle size of the primary particles of component a) ranges from 0.05 to 20 &#x3bc;m.

Method for vulcanizing caoutchouc or latex by applying a mixture of sulfur and a complexing agent

In a photovoltaic cell having a photovoltaically active semiconductor material constituted by a plurality of metals or metal oxides, the photovoltaically active material is selected from a

Photovoltaically active materials and cells containing them

Capacitors having an inert porous shaped body onto which a first electrically conductive layer, a second layer of barium titanate and a further electrically conductive layer have been applied.

High energy density capacitors

Method for producing alkali methylates

Hydroxylamine solutions stabilized using tri(4-(2,3-dihydroxyphenyl)-4-oxabutyl)amine, tri(4-(2,3-dihydroxyphenyl)-4-keto-3-azabutyl)amine or salts thereof, and methods of stabilizing hydroxylamine solutions using these compounds.

Stabilizing agent for hydroxylamine solutions

Growing community of inventors

Dannstadt-Schauernheim, Germany

Hans-Josef Sterzel