Varian Semiconductor Equipment Associates, Inc.

Hans-Joachin Ludwig Gossmann

Yuri Erokhin

Louis Steen

An improved method of doping a workpiece is disclosed. In this method, a film comprising the species to be implanted is introduced to the surface of a planar or three-dimensional workpiece. This film can be grown using CVD, a bath or other means. The workpiece with the film is then subjected to ion bombardment to help drive the dopant into the workpiece. This ion bombardment is performed at elevated temperatures to reduce crystal damage and create a more abrupt doped region.

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Summit, NJ, United States of America

Hans-Joachin Ludwig Gossmann