Infineon Technologies Ag

Hans Joachim Schulze

Anton Mauder

Markus Zundel

Hermann Gruber

Elmar Falck

Thomas Gross

Gerhard Miller

Josef Georg Bauer

Mathias Von Borcke

Holger Rüthing

Werner Irlbacher

A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.

Methods for producing polysilicon resistors

A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the fact that, in the edge region of the component, provision is made of injection attenuation means for reducing the charge carrier injection from the rear side emitter or the cathode emitter into said edge section.

Vertical power semiconductor component

Growing community of inventors

Ottobrunn, Germany

Hans Joachim Schulze