Infineon Technologies Ag

Siemens Aktiengesellschaft

Hans-J&ouml;rg Timme

Robert Aigner

Wolfgang Werner

Stefan Kolb

Klaus-G&uuml;nter Oppermann

Dieter Maier-Schneider

Dieter Draxelmayr

Thomas Scheiter

Christofer Hierold

Thomas Bever

Hergen Kapels

A micromechanical differential pressure sensor device for measuring a pressure difference between two mutually separated spaces or media, in which two absolute pressure measuring devices are monolithically integrated on a single support substrate, in particular on a semiconductor chip. The absolute pressure measuring devices are preferably fabricated by surface micromachining.

Micromechanical differential pressure sensor device

A method is disclosed for producing a micromechanical component. The micromechanical component has sensor holes, wherein at least one component protective layer and/or a spacer coating is applied on the component before separating the wafer into chips. The component protective layer sealingly covers at least the walls of the holes extending parallel to the surface of the wafer and perpendicular to the surface of the wafer and the spacer coating sealingly covers at least the walls of the holes extending parallel to the surface of the wafer.

Micromechanical component protected from environmental influences

The invention relates to a micromechanical sensor and to a corresponding production method that includes the following steps: a) preparing a doped semiconductor wafer; b) applying an epitaxial layer that is doped in such a way that a jump in the charge carrier density in the interface between the semiconductor wafer and the epitaxial layer occurs; c) optionally etching ventilation holes traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer, at least one spacing layer, a membrane and optionally a semiconductor circuit on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interference between the wafer and the epitaxial layer by changing charge carrier concentration. The invention also relates to the utilization of the micromechanical sensor in pressure sensors or microphones.

Micromechanical sensor and method for its production

A micromechanical structure, such as a sensor, includes a substrate, a diaphragm, a cavity, a sacrificial layer and a terminating structure. The terminating structure is cut away in the region of the diaphragm in such a way that a media opening is located above the diaphragm. The diameter of the cavity is smaller over the entire circumference of the cavity than the diameter of the opening. A method for manufacturing the micromechanical structure is also provided.

Micromechanical structure, sensor and method for manufacturing the same

A sensor, in particular a micromechanical pressure sensor, has two identical capacitive partial structures coupled to an evaluation circuit. In the case of in-phase driving, an additive signal is present as a pressure-dependent useful signal. In the case of in-antiphase driving, a difference signal is present as a diagnostic signal.

Growing community of inventors

Ottobrunn, Germany

Hans-Jörg Timme

Growing community of inventors

Ottobrunn, Germany

Hans-J&ouml;rg Timme

Hans-Jörg Timme