Siemens Aktiengesellschaft

Hans J Pfleiderer

Karl Knauer

Ignaz Eisele

Wolfgang Riedl

Joze Furlan

Wilhelm Kusian

Ekkehard Preuss

Method of making integrated-circuit stacked-cell solar module

In the illustrated embodiments, the space required for a transversal filter with a given number of evaluation factors is reduced by providing valuator circuits embodying such factors as inputs to each successive capacitor element of a charge shifting device. In one mode of operation the signal to be filtered is sampled via the valuator circuits on each charge shift cycle while readout from the series output occurs on alternate cycles. Since the readout scanning frequency is a submultiple of the input sampling frequency, the filter is well suited as a low-pass filter.

Transversal filter having at least one analog shift register, and a

A transversal filter with a charge shift device is disclosed for realizing a given filter function. The charge shift device includes a substrate of doped semiconductor material having arranged on one surface thereof a series of shift elements, each shift element having a plurality of capacitor elements in correspondence to the number of shift pulse sequence lines employed with the charge shift device. A serial input is provided for the filter to which an input signal is connected. Capacitor elements connected to one of the shift pulse sequence lines have non-reactive amplifying output units connected thereto. At least one of the capacitor elements connected to at least one of the other shift pulse sequence lines has an additional non-reactive amplifying unit connected thereto. All of the non-reactive amplifying units also connect with an output of the filter.

Transversal filter

A semiconductor device is disclosed in which an intrinsic or weakly doped semiconductor layer is arranged on a substrate. The semiconductor layer contains a first P doped zone and a first N doped zone which are separated by a portion of the said intrinsic layer serving as base zone. The semiconductor layer further contains a second P doped zone and a second N doped zone which are also separated from one another by the base zone. The four doped zones are arranged such that a connecting line between the second P doped zone and second N doped zone intersects a connecting line between the first P doped zone and the first N doped zone preferably at right angles. A sub-diode formed of the first doped zones affects the operation of a sub-diode formed by the second doped zones.

Semiconductor device having two intersecting sub-diodes and

An information memory for storing information in the form of electric charge carriers has at least one dynamic storage element which is arranged upon a surface of at least one substrate made of semiconductor material and doped with a given basic type doping. The substrate connection is included and the memory comprises at least one MIS capacitor. Upon the substrate surface at least one electrically insulating layer is present which carries at least one capacitor electrode. The dynamic storage element comprises the MIS capacitor or an adjacent arrangement of several MIS capacitors, separated from one another by, at the most, narrow distances and comprises at least one contact area at the substrate surface which is provided with an externally accessible ohmic terminal contact, and which contacts at least the margin of the MIS capacitor or t least one of the MIS capacitors, nd which contains material having the basic type of doping. Within the electrically insulating layer, within the MIS capacitor or capacitors, the values of the numerical ratio .epsilon./d--whereby .epsilon. is the dielectric constant and d is the layer thickness of the electrically insulating layer--and/or the values of the surface density of the basic type of doping of the substrate in the area or in the areas of the MIS capacitor or capacitors and/or the values of the surface density, with respect to the surface of the substrate, of and adjacent to the substrate and doped opposite to the type of doping of the substrate layer, are selected differently with respect to location in such a way that, by the way of applying an electrode voltage, which may be given within a wide range between the substrate terminal and electrode, the local distribution of the amounts of the potential maximum between the range or within the ranges of the MIS capacitor or capacitor, comprises, laterally away from the contact area beginning at the side of the contact area, at least one increase from a minimum value to a maximum value.

Information memory for storing information in the form of electric

A magnetic field sensitive diode including a silicon body, an n-injecting contact electrode and a p-injecting contact electrode located at spaced portions of the body, the body having opposed parallel surfaces having different recombination rates with respect to pairs of free charge carriers, the surface having the lower recombination rate consisting of silicon dioxide, the n-injecting contact electrode consisting of diffused in lithium, with substantially all of the acceptors in the silicon body being compensated by incorporated lithium ions, the silicon dioxide surfaces being essentially free of lithium. The invention also relates to a method of producing the improved structure.

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Zorneding, Germany

Hans J Pfleiderer