Siemens Aktiengesellschaft

Infineon Technologies Ag

Infineon Technologies Austria Ag

Wobben Properties Gmbh

Siemens Aktiengellschaft

Siemens Energy Global Gmbh & Co. Kg

Hans-Günter Eckel

Hubert Schierling

Mark-Matthias Bakran

Dominik Ergin

Hans-Joachim Knaak

Daniel Schmitt

Herbert Gambach

Andreas Philipp

Marcus Wahle

Jan Fuhrmann

Quang Tien Tran

Steffen Pierstorf

Felix Kayser

Marten Müller

Sidney Gierschner

Jörg Schumann

Yves Hein

Cord Prignitz

Christoph Junghans

Sven Achenbach

A method for controlling a power converter, which in particular has partial power converters connected in parallel, is provided. The method includes determining a nominal voltage for the power converter; and dividing an output voltage for the power converter into a number of, in particular equal, voltage ranges. The voltage ranges are limited by a discrete upper voltage limit and a discrete lower voltage limit and the voltage ranges can be adjusted by switching the power converter, in particular the partial power converters. The method includes allocating the nominal voltage a voltage range with a discrete upper and lower voltage limits; allocating a first switch setting to the lower voltage limit; allocating a second switch setting to the upper voltage limit; and switching between the first switch setting and the second switch setting so that the power converter generates an actual voltage corresponding to the nominal voltage.

Method for controlling a power converter

A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure. The semiconductor device includes a second transistor structure including a second transistor body region of a second conductivity type located within the semiconductor substrate. At least part of the second transistor body region is located between a first source/drain region of the second transistor structure and a second source/drain region of the second transistor structure. At least part of the second source/drain region of the second transistor structure is located between a doping region comprising the second source/drain region of the first transistor structure and the second transistor body region.

Semiconductor devices and a method for forming a semiconductor device

A multilevel converter has a central device for controlling operations and a plurality of series-connected sub modules that each has a first switch, a second switch, and a capacitor. At least two of the sub modules form a multi module, wherein, in charging phases and in discharging phases of the multi module, one of the switches of each sub module is switched off and the other switch of each sub module is switched on. The multi module has a control device that is connected to the central device and undertakes control of the sub modules of the multi module on the basis of control signals from the central device. The control device is configured such that it monitors the capacitor voltages of the sub modules and, in the event of an imbalance in the capacitor voltages, brings about balancing.

Multilevel converter and method utilizing blocking periods for balancing the voltages of capacitors of the submodules of the multilevel converter

The invention relates to a active-neutral point clamped converter having at least one half-bridge circuit connected into a DC voltage circuit. Each half-bridge circuit has a high-potential-side input half-bridge and a low-potential-side input half-bridge in series. The half-bridge circuit further has an output half-bridge connected between center taps of the input half-bridges. The total inductance within the output half-bridges and between the three half-bridges is dimensioned such that if any of the power semiconductors of the half-bridge circuit fails, a short-circuit can be reliably disconnected via a shorted circuit formed between the three half-bridges of the half-bridge circuit by the intact power semiconductors in said shorted circuit.

Three-level active neutral point converter

An intermediate voltage circuit current converter having two current converter sections arranged in series on the direct voltage side is disclosed. The current converter section has a capacitor connected in parallel with two bridge modules that are connected in series with each other. The output of the current converter section is located on the series connection between the two bridge modules and the outputs of the two current converter sections are connected to a further bridge module. Each bridge modules comprises a series connection of two power semiconductor units. The intermediate potentials on the connection between the two power semiconductor units in each of the bridge modules are electrically connected to one another by a further capacitor, and the intermediate potential of the further bridge module provides the phase connection of the intermediate voltage circuit current converter for a given phase of the intermediate voltage circuit current converter.

Intermediate voltage circuit current converter in five-point topology

A protective device for a voltage-controlled semiconductor switch has a gate connection, a power emitter connection, an auxiliary emitter connection and a collector connection. The semiconductor switch can switch a current between the collector connection and the power emitter connection. A voltage-limiting device limits the voltage between the gate connection and the power emitter connection. A deactivation device is connected to the voltage-limiting device and deactivates the voltage-limiting device during a switch-on of the semiconductor switch.

Protective device for a voltage-controlled semiconductor switch

A submodule for a high-voltage converter with reduced risk of cross-ignition includes first and second series-connected energy storage devices, first and second semiconductor series circuits connected in parallel with the energy storage devices, respectively, and having first and second, and respectively third and fourth, switched power semiconductor switching units. A first terminal connects to a first potential point between the first and second switching units, a second terminal connects to a second potential point between the third and fourth switching units. A connecting switching unit is connected between the first and second semiconductor series circuits. A first connecting branch with a first diode connects the first potential point and the potential point between the energy storage devices. A second connecting branch with a second diode connects the second potential point and the potential point between the energy storage devices. The connecting branch diodes are oriented in mutually opposite directions.

Double module for a modular multi-stage converter

The invention relates to a method for commutating from a reverse-conducting IGBT (T) operated in the diode mode to a reverse-conducting IGBT (T) operated in the IGBT mode. According to the invention the reverse-conducting IGBT (T) operated in the diode mode is turned off only at the instant a current starts to flow in the reverse-conducting IGBT (T) operated in the IGBT mode. Accordingly said commutation method is event-driven, as a result of which it is less sensitive to poorly toleranced operating times.

Method for commutating a current in an electronic power converter phase from a reverse-conducting IGBT in a diode mode to a reverse-conducting IGBT in an IGBT mode

A method for controlling two electrically series-connected reverse-conductive (RC) IGBTs (RC-IBGT) of a half bridge is disclosed, wherein an operating DC voltage is applied across the series connection and one of the two series-connected reverse-conductive IGBTs operates in IGBT mode and another of the two series-connected reverse-conductive IGBTs operates in diode mode, and wherein each of the two reverse-conductive IGBTs has three switching states '+15V', '0V', &#x201c;&#x2212;15V&#x201d;. The RC-IGBT Toperated in diode mode does not go into the switching state (&#x2212;15V) of highly charged carrier concentration, but instead into a state of medium charge carrier concentration associated with the switching state &#x201c;0V&#x201d;, and not into the switching state &#x201c;&#x2212;15V&#x201d;, as is known from conventional methods. This reduces the reverse-recovery without adversely affecting the forward voltage.

Method for controlling two electrically series-connected reverse conductive IGBTs of a half bridge

A semiconductor device includes a cathode and an anode. The anode includes a first p-type semiconductor anode region and a second p-type semiconductor anode region. The first p-type semiconductor anode region is electrically connected to an anode contact area. The second p-type semiconductor anode region is electrically coupled to the anode contact area via a switch configured to provide an electrical connection or an electrical disconnection between the second p-type anode region and the anode contact area.

Semiconductor device including diode

The invention relates to a semiconductor diode, an electronic component and to a voltage source converter. According to the invention, the semiconductor diode having at least one pn-transition can be switched between a first state and a second state. In comparison to the first state, the second state has a greater on-state resistance and a smaller accumulated charge, and the pn-transition is capable of blocking both in the first state as well as in the second state with at least one predetermined blocking ability. An MOS-controlled diode is hereby obtained in which the transition from the on-state to the blocking state is simplified and is thus not critical with regard to the temporal sequence of the control pulses.

Semiconductor diode, electronic component and voltage source inverter

A traction current converter includes a line-side four-quadrant converter which is provided with turn-off power semiconductors that are implemented as current converter valves. Each of the power semiconductors is connected electrically back-to-back in parallel to a corresponding power diode. A regulating device has an output side which is connected to control terminals of the power semiconductors. Each of the power diodes is implemented as controllable power diode which can be connected on the control system side to a corresponding diode control device having an input side which is connected to control outputs of the regulating device. In this way, the four-quadrant converter of a traction current converter can be reliably operated without having to use power semiconductor modules with enlarged diode chip surface.

Growing community of inventors

Rostock, Germany

Hans-Günter Eckel