Infineon Technologies Ag

Hans-Dieter Wohlmuth

Christoph Glacer

Hans Taddiken

Christoph Kadow

Winfried Bakalski

Valentyn Solomko

Dominik Heiss

Martin Bartels

Matthias Markert

Marc Tiebout

Nikolay Ilkov

Herbert Knapp

Peter Pfann

Andreas Baenisch

Thomas Leitner

Thomas Liebermann

Krzysztof Kitlinski

Günter Donig

Daniel Schroegendorfer

Werner Simburger

Jorg Langenberg

Werner Simb&uuml;rger

Daniel Schrögendorfer

A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

Phase change switch with multi face heater configuration

A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.

In accordance with an embodiment, a radio frequency (RF) amplifier circuit includes a switchable capacitance circuit having a first terminal configured to be coupled to an input matching inductor. The switchable capacitance circuit is configured to provide a short circuit between the first and second terminals in a first state, and provide a first capacitive impedance between the first and second terminals in a second state. The RF amplifier also includes a low noise amplifier (LNA) having an input terminal coupled to the second terminal of the switchable capacitance circuit; and a bypass switch coupled to an output of the LNA, the second terminal of the switchable capacitance circuit, and an output of the RF amplifier circuit. The bypass switch is configured to select the output of LNA in the first state, and select the second terminal of the switchable capacitance circuit in the second state.

System and method for bypassing a low noise amplifier

In accordance with an embodiment, a circuit includes: a replica input transistor, a first replica cascode transistor, an active current source, and an active cascode biasing circuit. The active current source is configured to set a current flowing through the first replica cascode transistor and the replica input transistor to a predetermined value by adjusting a voltage of a control node of the replica input transistor; and an active cascode biasing circuit including a first output coupled to the control node of the first replica cascode transistor, and the active cascode biasing circuit configured to set a drain voltage of the replica input transistor to a predetermined voltage by adjusting a voltage of the control node of the first replica cascode transistor.

System and method for biasing an RF circuit

An ESD protection circuit is disclosed. In one embodiment, the ESD circuit is coupled to at least one signal transmission line and a positive and negative supply voltage of an integrated circuit, and includes at least one ESD-element connected between the signal transmission line and either one of the positive or negative supply voltages. At least one high-frequency transmission line is connected in series to the ESD-element and dimensioned in such a way that, at a predetermined high-frequency of a signal, an impedance of the current-path via the ESD-element is transformed, compared with the system impedance, from a low impedance to a very high impedance.

ESD protection circuit for a high frequency circuit

Integrated circuit including a mixer circuit, which has a first circuit section, a second circuit section, and a transformer. The first circuit section has two radiofrequency terminals. The second circuit section has two reference oscillator terminals, an active mixer unit with a signal-amplifying unit, and two intermediate frequency terminals. The active mixer unit and the signal-amplifying unit have a common current path. The transformer directly electrically decouples the two radiofrequency terminals from the active mixer unit, and couples the first circuit section and the second circuit section together such that each of the two circuit sections is separately supplied with a full operating voltage of the integrated circuit. The integrated circuit may additionally include a second transformer connected between the active mixer unit and the two intermediate frequency terminals.

Integrated circuit having a mixer circuit

An integrated power amplifier arrangement with multistage construction is provided, in which a matching filter with integrated capacitance and inductance for impedance transformation is provided between an input transistor and an output transistor. In one example, the inductance of the matching filter is formed as a microstrip conductor, resulting in a significantly higher quality factor of the inductance and hence an improved linearity and an improved efficiency of the integrated power amplifier. The invention can advantageously be employed in particular in integrated transmitting arrangements.

Integrated power amplifier arrangement

A monolithic integrated transformer, especially for high frequency application in for example GSM-mobile components wherein a coupling factor is attained by using slotted windings and components introduced therein from another winding. The transformer can be produced according to standard silicon bipolar technology with three metallic layers. The production of the transformer do not involve any additional expenditures.

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Munich, Germany

Hans-Dieter Wohlmuth