Osram Opto Semiconductors Gmbh

Hans-Christoph Gallmeier

Ion Stoll

Tobias Gebuhr

Herbert Brunner

Simon Jerebic

Stefan Grötsch

Tony Albrecht

David Racz

Markus Richter

Thomas Schlereth

Johann Ramchen

Kirstin Petersen

Alexander Baumgartner

Michael Kruppa

Guenter Spath

Raimund Schwarz

Karlheinz Arndt

Andreas Weimar

Ales Markytan

Thomas Zeiler

Sebastian Taeger

Christian Gaertner

Albert Schneider

Gudrun Lindberg

Christian Gärtner

Michael Bestele

Markus Kirsch

Stefan Hartauer

Stephan Preuβ

Hansjörg Schöll

Claudia Jurenka

Peter Holzer

Simon Bluemel

Stephan Preuß

An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.

Optoelectronic semiconductor component

A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.

Method for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip for the production of a radiation-emitting semiconductor component, and radiation-emitting semiconductor component

An optoelectronic semiconductor component includes a carrier and at least one optoelectronic semiconductor chip mounted on the carrier top. The semiconductor component includes at least one bonding wire, via which the semiconductor chip is electrically contacted, and at least one covering body mounted on a main radiation side and projects beyond the bonding wire. At least one reflective potting compound encloses the semiconductor chip laterally and extends at least as far as the main radiation side of the semiconductor chip. The bonding wire is covered completely by the reflective potting compound or completely by the reflective potting compound together with the covering body.

A method of manufacturing optoelectronic components includes spraying a fluorescent layer of an optoelectronic component onto a substrate, the substance or the substance mixture of the fluorescent layer including an electric charge when sprayed on, and wherein the electrically charged substance or the at least partially electrically charged substance mixture includes a larger electric potential when the fluorescent layer is sprayed on than at least one area of the substrate; and locally adjusting the thickness of the fluorescent layer of the sprayed-on fluorescent substance when spraying on the fluorescent layer onto the substrate by an electric potential gradient.

Method of manufacturing optoelectronic components and device for manufacturing optoelectronic components

In one embodiment, the method is configured for producing optoelectronic semiconductor components () and includes the steps of:

Method for producing optoelectronic semiconductor components, leadframe assembly and optoelectronic semiconductor component

A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps:

Method for producing a plurality of radiation-emitting semiconductor chips

A method for manufacturing at least one optoelectronic semiconductor device includes providing a substrate and applying a number of optoelectronic semiconductor chips, which are arranged spaced apart from one another in a lateral direction, on an upper face of the substrate. At least one reflective coating is applied to the exposed areas of the substrate and the lateral surfaces of the optoelectronic semiconductor chips. Openings are introduced into the reflective coating, which completely penetrate the reflective coating. Electrically conductive material is arranged on the reflective coating and at least on some parts of the openings. Radiation penetration surfaces of the optoelectronic semiconductor chips are free of the reflective coating and the reflective coating does not laterally extend beyond the optoelectronic semiconductor chips.

Method for manufacturing at least one optoelectronic semiconductor device

In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Optoelectronic semiconductor component, conversion-medium lamina and method for producing a conversion-medium lamina

The invention relates to an optoelectronic semiconductor element that emits mixed-color radiation when in operation. The optoelectronic semiconductor component comprises an optoelectronic semiconductor chip, a conversion element that has a curvature, and a spacer element that is arranged between the optoelectronic semiconductor chip and conversion element. The spacer has a curved surface that faces the conversion element, with the conversion element being in direct contact with the curved surface.

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

Contacting an optoelectronic semiconductor component through a conversion element and corresponding optoelectronic semiconductor component

A method of producing a light-emitting diode includes providing at least one light-emitting diode chip, providing a suspension comprising a solvent and particles of at least one luminescent material, arranging the at least one light-emitting diode chip in the suspension, electrophoretically depositing the particles on an outer face of the at least one light-emitting diode chip, and completing the light-emitting diode.

Method for producing a light-emitting diode and light-emitting diode

An optoelectronic component comprising an optoelectronic semiconductor chip () having a contact side () and a radiation coupling-out side () situated opposite; a chip carrier (), on which the semiconductor chip () is applied via its contact side (); a radiation conversion element () applied on the radiation coupling-out side (); and a reflective potting compound (), which is applied on the chip carrier () and laterally encloses the semiconductor chip () and the radiation conversion element (); wherein the potting compound () adjoins an upper edge of the radiation conversion element () in a substantially flush fashion, such that a top side of the radiation conversion element () is free of the potting compound ().

Optoelectronic component and method for producing an optoelectronic component

A method of producing a component including providing a carrier having a top, an underside, and at least one connection area, applying an optoelectronic component to the top, wherein the optoelectronic component has a contact area facing away from the carrier, applying insulating material to the contact and connection areas, wherein the insulating material is free of foreign particles, applying an insulating layer to exposed places of the insulating material, optoelectronic component and carrier, wherein the insulating layer includes foreign particles in a predefinable concentration, removing the insulating layer in a region above the contact and/or connection areas, to produce openings, removing the insulating material in a region above the contact and connection areas, thereby producing at least two openings in the insulating material, and arranging conductive material on the insulating layer and at least in places in the openings, wherein conductive material conductively connects the contact and connection areas.

Method for producing an optoelectronic semiconductor component

A method for producing an optoelectronic device is provided, in which a luminescent diode chip () is mounted on a base surface () on the first terminal area () of a carrier (). An electrically insulating layer () is applied to side faces () of the luminescent diode chip (). An electrically conductive layer (), which leads from a second terminal contact () of the luminescent diode chip () over the electrically insulating layer () to a second terminal area () on the carrier (), is subsequently applied. A photoresist layer () is applied to the electrically conductive layer (), which photoresist layer () is exposed by application of an electrical voltage to the luminescent diode chip () so that the luminescent diode chip () emits radiation (). After development of the photoresist layer (), a portion of the electrically conductive layer () arranged on the radiation exit surface () is removed by means of an etching process, in which the photoresist layer () serves as a mask.

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Wuppertal, Germany

Hans-Christoph Gallmeier