Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Osram Opto Semiconductors Gmbh

Friedrich-schiller-universitat Jena

Hans-Christoph Eckstein

Uwe Zeitner

Wolfgang Schmid

Bernd Höfer

Wiebke Eckstein

The invention relates to an electromagnetic optical element which scatters radiation in a diffuse manner. Such optical elements can be used in nearly all projection applications including front and rear projection, display applications, (cinema) screens and similar. On the surface of a claimed optical element, a surface profile is provided, the surface structure of which is non-repeating and irregular. Elevations are formed that have a height by means of which a phase shift &#x394;&#x3d5; may be achieved that is greater than two and a half times the longest wavelength used, and the elevations have a lateral extension in one plane respectively, in all axial directions, that is greater than five times the longest wavelength used. The individual elevations have a continuous form in the three spatial axial directions and said elevations are devoid of edges, ledges and fissures.

Electromagnetic radiation-scattering element and method of manufacturing same

An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also includes at least one structured laser radiation scattering area in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.

Edge emitting semiconductor laser

An edge emitting semiconductor laser includes a semiconductor body, which has a waveguide region. The waveguide region has an active layer for generating laser radiation. The active layer is arranged between a first waveguide layer and a second waveguide layer. The waveguide region is arranged between a first cladding layer and a second cladding layer. The semiconductor body has a main region and at least one phase structure region in which is formed a phase structure for the selection of lateral modes of the laser radiation emitted by the active layer. The phase structure region is arranged outside the waveguide region or formed by a region in which a dopant is introduced or an intermixing structure is produced.

Growing community of inventors

Jena, Germany

Hans-Christoph Eckstein