Nxp B.v.

Nexperia B.v.

Hans Broekman

Stephan Heil

Johannes Josephus Theodorus Marinus Donkers

Johannes Donkers

Romain Delhougne

Johannes Theodorus Marinus Donkers

Mark De Keijser

Cecilia Van Der Schaar

A semiconductor device () and a method for manufacturing a semiconductor device (). The semiconductor device () includes a substrate (), a GaN layer (), and an AlGaN layer (). The GaN layer () is located between the substrate () and the AlGaN layer (). The device further includes at least one contact (), comprising a central portion () and an edge portion (), and a passivation layer () located at least between the edge portion () of the contact () and the AlGaN layer (). The edge portion () is spaced apart from an upper surface of the passivation layer (). The edge portion () may be spaced apart from the passivation layer () by a further layer () or by an air gap ().

Semiconductor device

Disclosed is a semiconductor device comprising at least one active layer () on a substrate () and a first contact () to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer () on the metal. A method of manufacturing such a semiconductor device is also disclosed.

Semiconductor device and manufacturing method

Disclosed is a semiconductor device comprising a substrate (); at least one semiconducting layer () comprising a nitride of a group 13 element on said substrate; and an ohmic contact () on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion () on the at least one semiconducting layer and a metal portion () adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.

Group 13 nitride semiconductor device and method of its manufacture

Growing community of inventors

Nijmegen, Netherlands

Hans Broekman