Oxford Instruments Analytical Oy

Oxford Instruments Technologies Oy

Hans Andersson

Seppo Nenonen

Heikki Sipilä

Pasi Antero Kostamo

Arto Rantala

Veikko Kämäräinen

Juha Kalliopuska

Juha Jouni Kalliopuska

Disclosed preamplifier circuit comprises amplifier arranged in first current path between input node and output node of the preamplifier circuit. Feedback capacitor is arranged in second current path between said input and output nodes. Feedback circuit having adjustable transfer function is arranged in third current path between said input and output nodes. Reset switch arranged in said third current path enables selectively coupling output of the feedback circuit to input of the amplifier and decoupling output of the feedback circuit from input of the amplifier. Loop controller is arranged selectively, in dependence of voltage in the preamplifier circuit, one of open reset switch to set preamplifier circuit in normal operating mode and close reset switch to set preamplifier circuit in reset mode. Loop controller is arranged to adjust the transfer function of the feedback circuit at least in part in dependence of the current operating mode of the preamplifier circuit.

Preamplifier circuit

Disclosed is a semiconductor radiation detector assembly including a detector chip having a front side for receiving radiation and a back side; and a flexible substrate including a center portion having its front side attached to the back side of the detector chip and a plurality of strips extending from the center portion and bent to protrude away from the detector chip, wherein the flexible substrate includes a plurality of conductive tracks that extend on a surface of the strips from the center portion towards lateral ends of the strips for electrical coupling and mechanical attachment to one of a plurality of contact pins, and wherein the detector chip is electrically coupled to at least one of the conductive tracks.

Semiconductor radiation detector

A semiconductor radiation detector includes a bulk layer of semiconductor material. On a first side of said bulk layer is an arrangement of field electrodes and a collection electrode for collecting radiation-induced signal charges from said bulk layer. A radiation shield exists on a second side of said bulk layer, opposite to said first side, which radiation shield selectively overlaps the location of said collection electrode.

Semiconductor detector with radiation shield

A radiation window membrane and for covering an opening in an X-ray device is presented, as well a method for its manufacturing. Said openings are such through which X-rays are to pass. The membrane comprises a window base layer and a pinhole-blocking layer on a surface of said window base layer. Said pinhole-blocking layer comprises graphene.

Radiation window, and a method for its manufacturing

A semiconductor radiation detector crystal is patterned by using a Q-switched laser to selectively remove material from a surface of said semiconductor radiation detector crystal, thus producing a groove in said surface that penetrates deeper than the thickness of a diffused layer on said surface.

Growing community of inventors

Vantaa, Finland

Hans Andersson