Toyota Jidosha Kabushiki Kaisha

Toyota Motor Europe

Dutch Institute of Fundamental Energy Research

Hannah Johnson

Sachin Kinge

Kevin Sivula

Rebekah Anne Wells

Georgios Zafeiropoulos

Michail Tsampas

Jun-Ho Yum

Marina Caretti

Elizaveta Mensi

A device for coating semiconductor/semiconductor precursor particles on a flexible substrate and a preparation method of a semiconducting thin film, wherein the device includes: a container for a first and second solvent substantially immiscible; injection means for injecting a predetermined dispersion volume of at least one layered semiconductor particle material or its precursor(s), occurring at a liquid-liquid interface formed within the container and between the first and second solvent, and creating a particle film at the liquid-liquid interface; a first support means; substrate extracting means; substrate supply means; compression means, reducing a distance between particles and push the film onto the substrate, wherein the compression means includes several pushing means mounted on a drive device, wherein at least two of the several pushing means are at least partially submerged in the second solvent during drive device rotation, and moved through the second solvent toward the first support means.

Solution-based deposition method for preparing semiconducting thin films via dispersed particle self-assembly at a liquid-liquid interface

Method for making a gas diffusion layer for an electrode, the method including processing quartz wool with water in a blender to form a suspension, filtering the suspension to remove water and contaminants, to form a cake of entangled quartz fibres, annealing the cake of entangled quartz fibres without complete melting of the fibres to obtain a porous quartz felt having pore size greater than 1 μm and coating the porous quartz felt with a conductive material. Gas diffusion layer for an electrode and photoelectrode including the gas diffusion layer.

Gas diffusion layer, method for making the same and photoelectrode

The present disclosure relates to a carbon dioxide capture device comprising a first reactor and a second reactor both of which show a (photo)anode containing or connected to oxygen evolution and/or carbon dioxide evolution catalyst(s) and a (photo)cathode containing or connected to an oxygen reduction catalyst, wherein the first reactor comprises an anion exchange membrane placed between the porous (photo)anode and porous (photo)cathode, and the second reactor comprises a proton exchange membrane placed between the porous (photo)anode and porous (photo)cathode. On the porous (photo)cathode side of the first reactor there is a fluid inlet able to carry carbon dioxide, air and water, and on the side of the porous (photo)cathode of the second reactor there is a fluid outlet able to carry carbon dioxide and water.

Photoelectrochemical device for the capture, concentration and collection of atmospheric carbon dioxide

A method for preparing a semiconducting thin film and device for carrying out the method, wherein the method includes: (1) providing a liquid-liquid interface; (2) providing at least one layered semiconductor material or its precursor(s) in the form of particles in a solvent in the form of a dispersion; (3) injecting the dispersion at the liquid-liquid interface, in order to obtain an assembly of semiconductor/semiconductor precursor particles; (4) bringing the assembly of into contact with a flexible substrate; and (5) applying a surface pressure to the dispersion to obtain a particle film of semiconductor/semiconductor precursor on the substrate, wherein the first solvent has a higher density than the second solvent.

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Brussels, Belgium

Hannah Johnson