Ocz Technology Group, Inc.

Ocz Storage Solutions Inc.

Hanmook Park

Jongmin Lee

Hyunmo Chung

Bumsoo Kim

Donghee Lee

Disclosed are a flash memory device and flash memory programming method that equalizes a wear-level. The flash memory device includes a memory cell array, an inversion determining unit to generate a programming page through inverting or not inverting a data page based on a number of '1's and '0's in the data page, a programming unit to store the generated programming page in the memory cell array; and a data verifying unit to read the programming page stored in the memory cell array, to restore the data page from the programming page according to whether an error exists in the read programming page, and to output the restored data page, and thereby can equalize a wear-level of a memory cell.

Flash memory device and flash memory programming method equalizing wear-level

Disclosed is a flash memory controlling method and controlling device. The flash memory controlling method including calculating a cost for each of available block recycling schemes based on a multi-block erase function when the multi-block erase function is supported, the multi-block erase function being a function that simultaneously erases data stored in a plurality of blocks of a flash memory and selecting at least one scheme from among the available block recycling schemes based on the calculated cost, and managing at least one block using the at least one method selected from among the available block recycling schemes.

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Seongnam-si, South Korea

Hanmook Park