Samsung Electronics Co., Ltd.

Hankuk Carbon Co., Ltd.

Hyundai Motor Company

Kia Motors Corporation

Seoyon E-hwa Co., Ltd.

Israel Aerospace Industries Ltd.

Korea Aviation Technologies Kat Co., Ltd.

Hanki Lee

Minjun Kim

Kyusung Park

Jinsoo Cho

Tae-Chul Jeong

Sooyoung Cho

Geunho Lee

Juhyung Ha

Changmo Moon

Sunho Beck

Changjun Meang

Dain Lee

Jeong-Gyu Bak

Boseong Kim

Senghyun Yun

Sunghong Won

Wandon Kim

Hak Soo Kim

Geunwoo Kim

Taegon Kim

Heonbok Lee

Sahwan Hong

Jeongmin Lee

Yoontae Hwang

Sunyoung Lee

Yongho Kim

Jinbum Kim

Seokhoon Kim

Sujin Jung

Bonyoung Koo

Choeun Lee

Yang Xu

Byeongchan Lee

Hyunjae Kang

Hyun Jin Kim

Kwanheum Lee

Jaeyoung Park

Kanghun Moon

Chi Won Yoon

Byung Kook Nam

Seong Kwon Go

Mungyu Bak

Juseong Park

Hyeong Shin Lee

A semiconductor device includes an active region on a substrate, a gate structure on the substrate and intersecting the active region, a source/drain region on the active region on both sides of the gate structure and including silicon (Si), and a contact structure on the source/drain region. The source/drain region includes a shallow doping region doped with germanium (Ge) and is in an upper region including an upper surface of the source/drain region. A concentration of germanium (Ge) in the shallow doping region gradually decreases from the upper surface of the source/drain region toward an upper surface of the substrate in a direction that is perpendicular to an upper surface of the substrate.

Semiconductor device with reduced contact resistance

A semiconductor device including a substrate; a fin active region on the substrate and extending in a first direction; a gate structure extending across the fin active region and extending in a second direction; a source/drain region in the fin active region on a side of the gate structure; an insulating structure covering the gate structure and the source/drain region; and contact structures penetrating through the insulating structure and respectively connected to the source/drain region and the gate structure, wherein one of the contact structures includes a seed layer on the gate structure or the source/drain regions and including lower and upper regions, the lower region having a first grain size and the upper region being amorphous or having a grain size different from the first grain size, and a contact plug on an upper region of the seed layer and having a second grain size.

Method of manufacturing a semiconductor device

Semiconductor device

A vehicle interior material manufacturing apparatus includes a preheater for preheating a raw fabric, a mover for moving the preheated raw fabric and including a stretching jig movable back and forth, a first mold into which the preheated raw fabric is inserted by the mover, a second mold having an at least partially corresponding shape to the first mold, and an injection resin introduced into the second mold, wherein the first mold includes: a base member on which an embossed pattern to be transferred to the preheated raw fabric is formed, a vacuum hole through which the preheated raw fabric is adsorbed onto the base member, and a spring core protruding from the base member and contacting at least a portion of the preheated raw fabric inserted into the first mold.

Vehicle interior material manufacturing apparatus and method for manufacturing vehicle interior material

According to an aspect of the present disclosure, a polyolefine resin composition includes 1 to 20 parts by weight of one polyolefine resin having a first melt index; 1 to 20 parts by weight of another polyolefine resin having a second melt index different from the first melt index; 60 to 85 parts by weight of an inorganic filler; and 5 to 20 parts by weight of a fluorine-acrylic copolymer-based compound.

Polyolefine resin composition, polyolefine master batch, method of manufacturing polyolefine master batch, and article formed of the same

A vertical take-off and landing aircraft using a hybrid electric propulsion system includes an engine, a generator that produces electric power using power supplied by the engine, and a battery that stores the produced electric power. A motor receives the electric power stored in the battery and electric power produced by the generator but not stored in the battery and provides the power to a thrust generating apparatus. A controller selects either silence mode or normal mode, and determines the amount of electric power stored in the battery and the amount of electric power not stored in the battery from the electric power supplied to the motor. In the silence mode, the controller supplies only the electric power stored in the battery and controls a duration by adjusting output power of motor. In the normal mode, the controller supplies electric power not stored in the battery.

Vertical take-off and landing aircraft using hybrid-electric propulsion system

Vertical take-off and landing aircraft using hybrid electric propulsion system

A semiconductor device may include a fin active region including a lower fin active region surrounded by a device isolation layer and an upper fin active region protruding from a top surface of the device isolation layer, a gate pattern disposed on top and side surfaces of the upper fin active region, and a source/drain region formed in the fin active region located at a side of the gate pattern. The gate pattern extends onto the device isolation region. The source/drain region includes a trench and epitaxial layers that fill the trench. Sidewalls of the trench include first sidewalls and second sidewalls that connect the first sidewalls to a bottom surface of the trench. The bottom surface of the trench is located at a lower level than the top surface of the device isolation layer beneath the gate pattern, and the second sidewalls of the trench have inclined {111} planes.

Semiconductor device having stressor and method of fabricating the same

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Seoul, South Korea

Hanki Lee