Applied Materials, Inc.

Hanish Kumar Panavalappil Kumarankutty

Jay D Pinson, Ii

Senthil Kumar Nattamai Subramanian

Michael Robert Rice

Steven D Marcus

Gayatri Natu

Rupankar Choudhury

Kirubanandan Naina Shanmugam

Shekhar Athani

Juan Carlos Rocha-Alvarez

Jason M Schaller

Hari K Ponnekanti

Sean M Seutter

Wendell Glenn Boyd, Jr

Zubin Huang

Diwakar N Kedlaya

Govinda Raj

Christopher L Beaudry

Sudhir R Gondhalekar

Khokan Chandra Paul

Badri N Ramamurthi

Sumit Agarwal

Ravikumar Patil

Stanley Wu

Mahesh Arcot

Truong Van Nguyen

Yizhen Zhang

Gopu Krishna

Hari Venkatesh Rajendran

Anil Kumar Kalal

Nikshep M Patil

Vidyadharan Srinivasa Murthy Bangalore

Somil Kapadia

Madhukar Krishna

Sriharsha Dharmapura Sathyanarayanamurthy

Prashant A Desai

Sandeep Kumpala

Shivaprakash Padadayya Hiremath

Sankar Menon Cherubala Pathayapura

Yogesh Tomar

Sonny Kunnakkat

Kirubanandan Shanmugam Naina

Embodiments of an apparatus for coating a plurality of gas lines are provided herein. In some embodiments, an apparatus for coating a plurality of gas lines via an ALD process includes: an oven having an enclosure that defines an interior volume configured to house the plurality of gas lines, the enclosure having a door configured for transferring the plurality of gas lines into and out of the interior volume; a plurality of inlet ports disposed through a first wall of the enclosure; a plurality of exhaust ports disposed through a second wall of the enclosure; a fluid panel disposed outside of the oven and coupled to the plurality of inlet ports via corresponding ones of a plurality of fluid distribution assemblies; and a foreline disposed outside of the oven and coupled to the plurality of exhaust ports.

Atomic layer deposition coating system for inner walls of gas lines

A method includes performing an atomic layer deposition (ALD) process with respect to a plurality of target elements to coat interiors of the plurality of target elements with a protective coating. Performing the ALD process includes alternating delivery of a first precursor inside the plurality of target elements for a first duration to form an adsorption layer on the interiors of the plurality of target elements, alternating purging of the first precursor from the plurality of target elements for a second duration, and alternating delivery of a second precursor inside the plurality of target elements for a third duration to cause the second precursor to react with the adsorption layer and form a target layer on the interiors of the plurality of target elements.

Parallel atomic layer deposition of target element interiors

Embodiments of the disclosure provide electrostatic chucks for securing substrates during processing. Some embodiments of this disclosure provide methods and apparatus for increased temperature control across the radial profile of the substrate. Some embodiments of the disclosure provide methods and apparatus for providing control of hydrogen concentration in processed films during a high-density plasma (HDP) process.

Electrostatic chuck with improved temperature control

Methods and apparatus for coating processing reactor component parts are provided herein. In some embodiments, a part coating reactor includes: a lower body and a lid assembly that together define and enclose an interior volume; one or more heaters disposed in the lid assembly; one or more coolant channels disposed in the lid assembly to flow a heat transfer medium therethrough; a plurality of gas passages disposed through the lid assembly to facilitate providing one or more gases to the interior volume, wherein the plurality of gas passages include a plurality of fluidly independent plenums disposed in the lid assembly; and one or more mounting brackets to facilitate coupling a workpiece to the lid assembly.

Atomic layer deposition part coating chamber

The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to receive a doping gas, and a third gas channel configured to receive a cleaning gas. The lid assembly also includes a showerhead. The showerhead includes one or more first gas openings that are configured to receive the process gas, and one or more second gas openings that are configured to receive the doping gas.

Lid assembly apparatus and methods for substrate processing chambers

Implementations of the present disclosure generally relate to apparatus and methods for uniform deposition of thin films on substrates. In one implementation, a plasma-processing chamber comprises a chamber body including chamber walls, a chamber floor, and a lid support. The plasma-processing chamber further comprises a substrate support assembly at least partially disposed within the chamber body and configured to support a substrate. The plasma-processing chamber further comprises a lid assembly disposed over the support assembly and positioned on the lid support wherein the lid assembly and the chamber body define a first processing volume. The plasma-processing chamber further comprises a bottom isolation assembly that circumscribes at least a portion of the substrate support assembly and is vertically movable from a loading position to a processing position. A seal is formed between the bottom isolation assembly and the lid assembly when the bottom isolation assembly is in the processing position.

Method and apparatus for semiconductor processing chamber isolation for reduced particles and improved uniformity

The present disclosure generally relates to generally relates to equipment for performing semiconductor device fabrication, and more particularly, to a cover ring for partially covering a surface of a substrate support in high-density plasma chemical vapor deposition processing. In one embodiment, the cover ring may include an annular body, an inner support block with a beveled first edge for stability, one or more thermal breaks to increase thermal movement towards the outer diameter, a rounded shoulder to prevent particle deposition, an outer lip configured to a substrate support pedestal, a vertical appendage to support the substrate, and a thermally conductive coating disposed on the annular ring to direct thermal conductivity towards the outer edge of the ring and prevent particle accumulation.

Amalgamated cover ring

Embodiments described herein include integrated systems used to directly monitor a substrate temperature during a plasma enhanced deposition process and methods related thereto. In one embodiment, a substrate support assembly includes a support shaft, a substrate support disposed on the support shaft, and a substrate temperature monitoring system for measuring a temperature of a substrate to be disposed on the substrate support. The substrate temperature monitoring system includes a optical fiber tube, a light guide coupled to the optical fiber tube, and a cooling assembly disposed about a junction of the optical fiber tube and the light guide. Herein, at least a portion of the light guide is disposed in an opening extending through the support shaft and into the substrate support and the cooling assembly maintains the optical fiber tube at a temperature of less than about 100&#xb0; C. during substrate processing.

Integrated substrate temperature measurement on high temperature ceramic heater

Implementations of the present disclosure generally relate to an improved factory interface that is coupled to an on-board metrology housing configured for measuring film properties of a substrate. In one implementation, an apparatus comprises a factory interface, and a metrology housing removably coupled to the factory interface through a load port, the metrology housing comprises an on-board metrology assembly for measuring properties of a substrate to be transferred into the metrology housing.

On-board metrology (OBM) design and implication in process tool

Growing community of inventors

Bengaluru, India

Hanish Kumar Panavalappil Kumarankutty