Stmicroelectronics S.a.

Tihive

Hani Sherry

Andreia Cathelin

Ullrich Pfeiffer

Janusz Grzyb

Andreas Kaiser

Yan Zhao

Richard Al Hadi

The invention relates to a sensor for a terahertz imaging system, comprising an array of terahertz radiation receivers; and an array of terahertz radiation transmitters having the same pitch as the array of receivers, located between the array of receivers and an analysis zone located in the near field of the transmitters, and configured such that each transmitter emits a wave towards both the analysis zone and a respective receiver of the array of receivers.

Near-field terahertz imager

The invention relates to a sensor for a terahertz imaging system which can be integrally produced using a semiconductor technology, comprising a flat substrate () made from semiconductor material that is transparent to terahertz radiation, configured to be oriented parallel to an object () to be analyzed; and a plurality of terahertz radiation receivers arranged according to a matrix () in the substrate. The sensor is lensless and comprises at least one terahertz radiation transmitter arranged in the substrate, so that the radiation emitted by the transmitter is reflected on the object () to be analyzed, towards the receivers.

Terahertz reflection imaging system

A terahertz imager includes an array of pixel circuits. Each pixel circuit has an antenna and a detector. The detector is coupled to differential output terminals of the antenna. A frequency oscillator is configured to generate a frequency signal on an output line. The output line is coupled to an input terminal of the antenna of at least one of the pixel circuits.

Terahertz imager

The present disclosure concerns a high frequency imager including a pixel matrix, each pixel including a high frequency oscillator, a transmission line positioned at a distance from an active surface of the imager smaller than the operating wavelength of the oscillator, a first end of the line being coupled to the oscillator, and a read circuit coupled to a second end of the line.

A frequency oscillator includes a ring oscillator having N inverters coupled in series, where N is an odd integer equal to three or more. A first filter is coupled between an output node of a first of the inverters and an output line of the frequency oscillator. A second filter is coupled between an output node of a second of the inverters and the output line of the frequency oscillator.

High frequency oscillator

A pixel circuit may include a detection circuit having first and second transistors coupled in series between differential output nodes of an antenna. The antenna may be configured to be sensitive to terahertz radiation. The pixel circuit may also include a capacitor coupled to an intermediate node between the first and second transistors, and control circuitry coupled to control nodes of the first and second transistors. The control circuitry may be configured for selectively applying to the control nodes a gate biasing voltage for biasing the control nodes of the first and second transistors during a detection phase of the pixel circuit, and/or a reset voltage for resetting a voltage stored by the capacitor.

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Grenoble, France

Hani Sherry